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Publications – R.M.Wallace

Total Peer-Reviewed Citations (as of November 2012):

Thompson’s Science Citation Index: >8600 - Impact “h-factor” = 31 http://www.researcherid.com/rid/A-5283-2008

Scopus – data since 1996 >9000 – Impact “h-factor” = 30 http://www.scopus.com/authid/detail.url?authorId=7401495290

Google Scholar (includes Patents and other publications): >13300 – Impact “h-factor” = 46

http://scholar.google.com/citations?user=zyDcuY0AAAAJ&hl=en

Publications (Peer Reviewed Journals)

2012

  1. L. L. Zhang, X. Zhao, H. Ji, M. D. Stoller, L. Lai, S. Murali, S. Mcdonnell, B. Cleveger, R. M. Wallace and R. S. Ruoff Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon Energy and Environmental Science, 5 9618 (2012) http://dx.doi.org/10.1039/c2ee23442d
  2. S.McDonnell, A. Pirkle, J. Kim, L. Colombo and R. M. Wallace Trimethyl-Aluminum and Ozone Interactions with Graphite in Atomic Layer Deposition Journal of Applied Physics, 112 104110 (2012). http://link.aip.org/link/doi/10.1063/1.4766408
  3. L. Tao, M. Holt, J. Lee, H. Chou, S. J. McDonnell, D.A. Ferrer, M. G. Babenco, R.M. Wallace, S.K. Banerjee, R. S. Ruoff, D.Akinwande,  "Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer," Journal of Physical Chemistry C 116 24068 (2012). http://dx.doi.org/10.1021/jp3068848
  4. B. Brennan , X. Qin , H. Dong , J. Kim, and R.M.Wallace, "In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN," Applied Physics Letters, 101 211604 (2012). http://link.aip.org/link/doi/10.1063/1.4767520
  5. A. Ismach, H. Chou, D.A. Ferrer, Y. Yu, S. McDonnell, H. C. Floresca, A. Covacevich, C. Pope, R. Piner, M. J. Kim, R. M.Wallace, L.Colombo and R.S. Ruoff, "Towards the Controlled Synthesis of hexagonal Boron Nitride Films," ACS Nano, 6 6378 (2012).http://dx.doi.org/10.1021/nn301940k
  6. B. Brennan, M. Milojevic, R. Contreras-Guerrero, H-C. Kim, M. Lopez-Lopez, J. Kim, and R.M.Wallace “Investigation of interfacial oxidation control using sacrificial metallic Al and La passivation layers on InGaAs,” Journal of Vacuum Science and Technology B 30 04E104 (2012). http://link.aip.org/link/doi/10.1116/1.4721276
  7. D. Zhernokletov, H. Dong, B. Brennan, J. Kim, and R.M.Wallace, "Optimization of the ammonium sulfide (NH4)2S passivation process on InSb(111)A," Journal of Vacuum Science and Technology B 30 04E103 (2012). http://dx.doi.org/10.1116/1.4719961 
  8. C. Gong, D. Hinojos, W. Wang, N. Nijem, B. Shan, R. M. Wallace, K. Cho, and Y. J. Chabal, "Metal–Graphene–Metal Sandwich Contacts for Enhanced Interface Bonding and Work Function Control," ACS Nano 6 5381 (2012) http://dx.doi.org/10.1021/nn301241p
  9. D. R. Gajula1a, D. W. McNeill, B. E. Coss, H. Dong, S. Jandhyala, J. Kim, R. M. Wallace and B. M. Armstrong, “Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors,” Applied Physics Letters, 100, 195101 (2012). http://dx.doi.org/10.1063/1.4712564
  10. G. Mordi, S. Jandhyala, C. Floresca, S. McDonnell, M. Kim, R. M. Wallace, L. Colombo, and J. Kim, “Low-organic layer as a top gate dielectric for graphene field effect transistors,” Applied Physics Letters, 100, 193117 (2012). http://dx.doi.org/10.1063/1.4711776
  11. B. Brennan, D. M. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, and R. M. Wallace, “In situ surface pre-treatment study of GaAs and In0.53Ga0.47As,” Applied Physics Letters, 100, 151603 (2012)  http://dx.doi.org/10.1063/1.3702885
  12. S. McDonnell, H. Dong, J. M. Hawkins, B. Brennan, M. Milojevic, F. S. Aguirre-Tostado, D. M. Zhernokletov, C. L. Hinkle, J. Kim, and R. M. Wallace, “Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems,” Applied Physics Letters, 100, 141606 (2012)  http://dx.doi.org/10.1063/1.3700863
  13. J. Chan, A. Venugopal, A. Pirkle, S. McDonnell, D. Hinojos, C. Magnuson, R. Ruoff, L. Colombo, R. Wallace, E. Vogel, “Reducing Extrinsic Performance Limiting Factors in Graphene Grown by Chemical Vapor Deposition,” ACS Nano 6, 3224 (2012) http://dx.doi.org/10.1021/nn300107f
  14. S. Jandhyala, G. Mordi, B. Lee, G. Lee, C. Floresca, P-R. Cha, J.H. Ahn, R. Wallace, Y. Chabal, M. Kim, L. Colombo, K. Cho, J. Kim “Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone,” ACS Nano, 6, 2722 (2012) http://dx.doi.org/10.1021/nn300167t
  15. D.M. Zhernokletov, H. Dong, B. Brennan, J. Kim, R.M. Wallace “In-situ X-ray photoelectron spectroscopy characterization of Al2O3/InSb interface evolution from atomic layer deposition,” Applied Surface Science, 258, 5522 (2012) http://dx.doi.org/10.1016/j.apsusc.2012.01.132
  16. P. Sivasubramani, T.J. Park, B. E. Coss, A. Lucero, J. Huang, B. Brennan, Y. Cao, D. Jena, H. Xing, R.M. Wallace, and J. Kim, “In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O3-oxidized GaN substrates,” Physica Status Solidi Rapid Research Letters, 6 22(2012) http://dx.doi.org/10.1002/pssr.201105417 

2011

  1. B. Brennan, H. Dong, D. Zhernokletov, J. Kim, and R. M.Wallace, “Surface and interface reaction study of half cycle atomic layer deposited Al2O3 on chemically treated InP surfaces,” Applied Physics Express, 4, 125701 (2011) http://dx.doi.org/10.1143/APEX.4.125701
  2. J-F. Veyan, H. Choi, M. Huang, R.C. Longo, J.B. Ballard, S. McDonnell, M. P. Nadesalingam, H. Dong, I. S. Chopra, J.H. G. Owen, W.P. Kirk, J. N. Randall, R. M. Wallace, K. Cho, and Y. J. Chabal, “Si2H6 Dissociative Chemisorption and Dissociation on Si(100)-(21) and Ge(100)-(21),” Journal of Physical Chemistry C, 115, 24534 (2011). http://dx.doi.org/10.1021/jp207086u
  3. B. Chakrabarti, H. Kang, B. Brennan, T. J. Park, K. D. Cantley, A. Pirkle, S. McDonnell, J. Kim, R. M. Wallace, and E. M. Vogel, “Investigation of Tunneling Current in SiO2/HfO2 Gate Stacks for Flash Memory Applications,” IEEE Transactions on Electron Devices, 58, 4189 (2011). http://10.1109/TED.2011.2170198
  4. R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors," Applied Physics Letters, 99, 172901 (2011). http://dx.doi.org/10.1063/1.3588255
  5. W. Wang, K, Xiong , R. M. Wallace , and K. Cho, “First-Principles Study of Initial Growth of GaΧO Layer on GaAs-β2(2×4) Surface and Interface Passivation by F,” Journal of Applied Physics, 110, 103714 (2011).  http://dx.doi.org/10.1063/1.3662892
  6. A.Herrera-Gomez, F.S. Aguirre-Tostado, P.G.Mani-Gonzalez, M. Vazquez-Lepe, A. Sanchez-Martinez, O. Ceballos-Sanchez, R.M.Wallace, G. Conti, and Y. Uritsky, “Instrument-related geometrical factors affecting the intensity in XPS and ARXPS experiments,” Journal of Electron Spectroscopy and Related Phenomenon, 184, 487 (2011). http://dx.doi.org/10.1016/j.elspec.2011.08.002
  7. A. Pirkle, J. Chan, A. Venugopal, D. Hinojos, C. W. Magnuson, S. McDonnell, L. Colombo, E. M. Vogel, R. S. Ruoff and R. M. Wallace, “The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2,” Applied Physics Letters, 99, 122108 (2011). http://dx.doi.org/10.1063/1.3643444
  8. B.E. Coss, W-Y Loh , H. C. Floresca , M. J. Kim , R.M. Wallace , J. Kim , R. Jammy , P. Majhi, “Dielectric Dipole Mitigated Schottky Barrier Height Tuning Using Atomic Layer Deposited Aluminum Oxide For Contact Resistance Reduction,” Applied Physics Letters, 99, 102108 (2011). http://dx.doi.org/10.1063/1.3633117
  9. M. Acik, G. Lee, C. Mattevi, A. Pirkle, R. Wallace, M. Chhowalla, K. Cho, and Y. Chabal, "The Role of Oxygen during Thermal Reduction of Graphene Oxide Studied by Infrared Absorption Spectroscopy" Journal of Physical Chemistry C, 115, 19761 (2011) http://.dx.doi.org/10.1021/jp2052618
  10. M. Milojevic, R. Contreras-Guerrero, E. O’Connor, B. Brennan, P. K. Hurley, J. Kim, C. L. Hinkle, and R. M. Wallace, “In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition,” Applied Physics Letters, 99, 042904 (2011). http://dx.doi.org/10.1063/1.3615666
  11. W. Wang, C. Gong, B. Shan, R. M. Wallace, and K. Cho, “Sulfur passivation effect on HfO2 /GaAs interface: A first-principles study,” Applied Physics Letters, 98, 232113 (2011). http://dx.doi.org/10.1063/1.3597219
  12. S. McDonnell, D.M. Zhernokletov, A.P. Kirk, J. Kim and R.M. Wallace “In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution,” Applied Surface Science, 257, 8747 (2011). http://dx.doi.org/10.1016/j.apsusc.2011.05.034
  13. Y. Zhu, S. Murali, M.D. Stoller, K. J. Ganesh, W Cai, P. J. Ferreira, A. Pirkle, R. M. Wallace, K.A. Cychosz, M. Thommes, D. Su, E. A. Stach, R. S. Ruoff Supercapacitors with a Novel Carbon Produced by Activation of Graphene Science, 332(6037), 1537 (2011). http://dx.doi.org/10.1126/science.1200770
  14. B. E. Coss, C. Smith, W-Y. Loh, P. Majhi, R. M Wallace, J. Kim, and R. Jammy, “Contact Resistance Reduction to FinFET Source/Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method,” IEEE Electron Device Letters, 32, 862 (2011). http://dx.doi.org/10.1109/LED.2011.2148091
  15. A. Posadas, M. Berg, H. Seo, A. de Lozanne, A. A. Demkov, D. J. Smith, A. P. Kirk, D. Zhernokletov, and R. M. Wallace, “Epitaxial integration of ferromagnetic correlated oxide LaCoO3 with Si(100),” Applied Physics Letters, 98, 053104 (2011). http://dx.doi.org/10.1063/1.3549301
  16. A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, C. L. Hinkle, R. M. Wallace, and E. M. Vogel “On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors,” Applied Physics Letters, 98, 193501 (2011). http://dx.doi.org/10.1063/1.3597219
  17. C.L.Hinkle, E.M.Vogel, P.D.Ye and R.M.Wallace, “Interfacial Chemistry of Oxides on InxGa(1-x)As and implications for MOSFET applications,” Current Opinion in Solid State and Materials Science, 15, 188 (2011) (Invited); http://dx.doi.org/10.1016/j.cossms.2011.04.005 
  18. W. Wang, K Xiong, R. M. Wallace and K.J. Cho “Si Passivation Effects on Atomic Bonding and Electronic Properties at HfO2/GaAs interface: A first-principles study,” Journal of Applied Physics, 109, 063704 (2011). http://dx.doi.org/10.1063/1.3554689
  19. É. O’Connor, B. Brennan, V. Djara, K. Cherkaoui, S. Monaghan, S. B. Newcomb, R.Contreras, M. Milojevic, G. Hughes, M. E. Pemble, R. M. Wallace, and P.K. Hurley. “A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47-As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers,” Journal of Applied Physics, 109, 024101  (2011). http://dx.doi.org/10.1063/1.3533959
  20. B. Brennan, M.Milojevic, C.L.Hinkle, F.S.Aguirre-Tostado, G.Hughes, and R.M.Wallace “Optimisation of the ammonium sulphide(NH4)2S passivation process on In0.53Ga0.47As,” Applied Surface Science, 257, 4028 (2011): http://dx.doi.org/10.1016/j.apsusc.2010.11.179

 

2010

  1. C. Gong, G.Lee, B. Shan, E.M. Vogel, R. M. Wallace, and K.J.Cho, “First-principles study of metal-graphene interfaces,” Journal of Applied Physics 108, 123711 (2010). http://dx.doi.org/10.1063/1.3524232

  2. W. Wang, K Xiong, R. M. Wallace and K.J. Cho, “Impact of Interfacial Oxygen Content on Bonding, Stability, Band offsets and Interface States of GaAs:HfO2 Interfaces,” Journal of Physical Chemistry C 114, 22610 (2010). http://dx.doi.org/10.1021/jp107880r
  3. A.Ali, A.P.Kirk, H. S. Madan, A. P. Kirk, D. A. Zhao, D. A. Mourey, M. K. Hudait, R. M. Wallace, T. N. Jackson, B. R. Bennett, J. B. Boos, and S. Datta, “Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3,” Applied Physics Letters 97, 143502 (2010). http://dx.doi.org/10.1063/1.3492847
  4. D.R. Baer, M.H. Engelhard, A.S. Lea, P. Nachimuthu, T.C. Droubay, J.Kim, B.Lee, C. Mathews, R.L. Opila, L.V. Saraf, W.F. Stickle, R.M. Wallace, and B.S.Wright, “Comparison of the sputter rates of oxide films relative to the sputter rate of SiO2” Journal of Vacuum Science and Technology A 28, 1060 (2010). http://dx.doi.org/10.1116/1.3456123
  5. T.J. Park, P. Sivasubramani, B. E. Coss, H.-C. Kim, B. Lee, R. M. Wallace, J. Kim, M.Rousseau, X. Liu, H. Li, J. S. Lehn, D. Hong, and D. Shenai, “Effects of O3 and H2O oxidants on C and N-related impurities in atomic layer-deposited La2O3 films observed by in situ x-ray photoelectron spectroscopy” Applied Physics Letters 97, 092904 (2010). http://dx.doi.org/10.1063/1.3481377
  6. A. Pirkle, S. McDonnell, B. Lee, J. Kim, L. Colombo and R. M. Wallace “The effect of graphite surface condition on the composition of Al2O3 by atomic layer deposition” Applied Physics Letters 97, 082901 (2010).  http://dx.doi.org/10.1063/1.3479908
  7. W. Wang, K. Xiong, G. Lee, M. Huang, R. M. Wallace, and K.J. Cho “Origin of HfO2/GaAs interface states and interface passivation: A first principles study,” Applied Surface Science 256, 6559 (2010) dx.doi.org/10.1016/j.apsusc.2010.04.048
  8. B. Lee, G. Mordi, M. J. Kim, Y. J. Chabal, E. M. Vogel, R. M. Wallace, K. J. Cho, L. Colombo and J. Kim, “Characteristics of High-k Al2O3 Dielectric Using Ozone-Based Atomic Layer Deposition for Dual-Gated Graphene Devices” Applied Physics Letters 97, 043107 (2010).  http://dx.doi.org/10.1063/1.3467454
  9. A. P. Kirk, M. Milojevic, J. Kim, and R. M. Wallace, An in situ examination of atomic layer deposited alumina/InAs(100) interfaces,” Applied Physics Letters 96, 202905 (2010). http://dx.doi.org/10.1063/1.3432749
  10. T.J. Park, K.J. Chung, H-C.l Kim, J. Ahn, R. M. Wallace, and J. Kim, “Reduced Metal Contamination in Atomic-Layer-Deposited HfO2 Films Grown on Si Using O3 Oxidant Generated Without N2 Assistance,” Electrochemical and Solid State Letters 13, G65 (2010). http://dx.doi.org/10.1149/1.3430657
  11. A. Herrera-Gomez, Y. Sun, F.-S. Aguirre-Tostado, C. Hwang, P.-G.Mani-Gonzalez, E. Flint, F. Espinosa-Magaña, and R. M. Wallace “Structure of Ultra-Thin Diamond-Like Carbon Films Grown with Filtered Cathodic Arc on Si(001),” Analytical Sciences 26, 267 (2010).
  12. W. Wang, G. Lee, M. Huang, R. M. Wallace, and K.J. Cho “First-principles study of GaAs (001)2-(24) surface oxidation and passivation with H, Cl, S, F, and GaO.” Journal of Applied Physics 107, 103720 (2010). http://dx.doi.org/10.1063/1.3369540

2009

  1. W. Wang, G. Lee, M. Huang, R. M. Wallace, and K.J. Cho “First-principles study of GaAs(0 0 1)-2(2 4) surface oxidation,” Microelectronic Engineering (2009) http://dx.doi.org/10.1016/j.mee.2009.11.006
  2. M. P. Kanouff, J. N. Randall, M. Nadesalingham, W. P. Kirk, and R. M. Wallace “High rate gas dosing for tip based nanofabrication processes,” Journal of Vacuum Science and Technology B 27, 2769 (2009). http://dx.doi.org/10.1116/1.3259955
  3. B.E.Coss, W.-Y.Loh, R. M. Wallace, J.Kim, P.Majhi, and R.Jammy “Near band edge Schottky barrier height modulation using high-k dielectric dipole tuning mechanism,” accepted, Applied Physics Letters 95, 222105 (2009).  http://dx.doi.org/10.1063/1.3263719
  4. M. Milojevic, R. Contreras-Guerrero, M. Lopez-Lopez, J. Kim and R. M. Wallace “Characterization of the “clean-up” of the oxidized Ge(100) surface by atomic layer deposition,” Applied Physics Letters 95, 212902 (2009). http://dx.doi.org/10.1063/1.3268449
  5. O. Seitz, M. Dai, F. S. Aguirre-Tostado, R. M. Wallace, and Y. J. Chabal “Copper-Metal Deposition on Self Assembled Monolayer for Making Top Contacts in Molecular Electronic Devices,” Journal of the American Chemical Society 131(50) 18159 (2009). http://dx.doi.org/10.1021/ja907003w
  6. C. L. Hinkle, M. Milojevic, E. M. Vogel, and R. M. Wallace “The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding,” Applied Physics Letters 95, 151905 (2009).  http://dx.doi.org/10.1063/1.3249577
  7. A. Pirkle, L.Colombo and R.M.Wallace “In-situ Studies of Al2O3 and HfO2 Dielectrics on Graphite,” Applied Physics Letters 95, 133106  (2009). http://dx.doi.org/10.1063/1.3238560
  8. M. I. Medina-Montes, M. V. Selvidge, A. Herrera-Gomez, F. S. Aguirre-Tostado, M. A. Quevedo-Lopez, and R. M. Wallace “Thermal stability of lanthanum in hafnium-based gate stacks,” Journal of Applied Physics 106 053506 (2009). http://dx.doi.org/10.1063/1.3190505
  9. A. Herrera-Gomez, J. T. Grant, P. J. Cumpson, M. Jenko, F. S. Aguirre-Tostado, C. R. Brundle, T. Conard, G. Conti, C. S. Fadley, J. Fulghum, K. Kobayashi, L. Kover, l H. Nohira, R. L. Opila, S. Oswald, R. W. Paynter, R. M. Wallace, W. S. M. Werner and J.Wolstenholme, “Report on the 47th IUVSTA Workshop, Angle-Resolved XPS: the current status and future prospects for angle-resolved XPS of nano and subnano films,” Surface and Interface Analysis (2009). http://dx.doi.org/10.1002/sia.3105
  10. B. Brennan, M. Milojevic, H. C. Kim, P. K. Hurley, J. Kim, G. Hughes, and R. M. Wallace “Half-Cycle Atomic Layer Deposition Reaction Study Using O3 and H2O Oxidation of Al2O3 on In0.53Ga0.47As,” Electrochemical and Solid State Letters 12(6) H205 (2009). http://dx.doi.org/10.1149/1.3109624
  11. C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, and R. M. Wallace “Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning,” Applied Physics Letters 94 162101(2009). http://dx.doi.org/10.1063/1.3120546
  12. B. Lee, T.J. Park, A. Hande, M.J. Kim, R.M. Wallace, J. Kim, X. Liu, J. Yi, M. Rousseau , D. Shenai, J. Suydam “Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone,” Microelectronic Engineering 86 (7-9) 1658 (2009). http://dx.doi.org/10.1016/j.mee.2009.03.056
  13. C.L. Hinkle, M. Milojevic, E.M. Vogel and R.M. Wallace “Surface passivation and implications on high mobility channel performance,” Microelectronic Engineering 86 (7-9) 1544 (2009) (Invited). http://dx.doi.org/10.1016/j.mee.2009.03.030
  14. B. Lee, K.J. Choi, A. Hande, M.J. Kim, R.M. Wallace, J. Kim, Y. Senzaki, D. Shenai, H. Li, M. Rousseau, and J. Suydam, “A novel thermally-stable zirconium amidinate ALD precursor for ZrO2 thin films,” Microelectronic Engineering 86(3) 235 (2009). http://dx.doi.org/10.1016/j.mee.2008.03.020
  15. B.S. Coss , H.-C.l Kim, F. S. Aguirre-Tostado, R. M. Wallace, and J. Kim, “Role of lanthanum in the gate stack: Co-sputtered TaLaN metal gates on Hf-based dielectrics,” Microelectronic Engineering 86(3) 235 (2009). http://dx.doi.org/10.1016/j.mee.2008.05.027
  16. P. Patel, M. Nadesalingam, R. M. Wallace, and D. A. Buchanan “Physical and optoelectronic characterization of reactively sputtered molybdenum-silicon-nitride alloy metal gate electrodes,” Journal of Applied Physics 105, 024517 (2009). http://dx.doi.org/10.1063/1.3072698

 

2008

  1.  P. Zhao, M. J. Kim, B. E. Gnade, and R. M. Wallace, “Dopant effects on the thermal stability of FUSI NiSi,”  Microelectronic Engineering 85, 54 (2008). http://dx.doi.org/10.1016/j.mee.2007.05.001
  2.  C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, and R. M. Wallace, “GaAs interfacial self-cleaning by atomic layer deposition,” Applied Physics Letters 92, 071901 (2008). http://dx.doi.org/10.1063/1.2883956
  3. F. S. Aguirre-Tostado, M. Milojevic, C. L. Hinkle, E. M. Vogel, R. M. Wallace, S. McDonnell, and G. J. Hughes, “Indium stability on InGaAs during atomic H surface cleaning,” Applied Physics Letters 92, 171906 (2008). http://dx.doi.org/10.1063/1.2919047
  4. B.Lee, S.-Y. Park, H.-C. Kim, K. Cho, E. M. Vogel, M. J. Kim, R. M. Wallace, and J. Kim, “Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics,”  Applied Physics Letters 92, 203102 (2008). http://dx.doi.org/10.1063/1.2928228
  5. B.S. Coss , H.-C.l Kim, F. S. Aguirre-Tostado, R. M. Wallace, and J. Kim, “Role of lanthanum in the gate stack: Co-sputtered TaLaN metal gates on Hf-based dielectrics,” Microelectronic Engineering (2008), in press, http://dx.doi.org/10.1016/j.mee.2008.05.02
  6. B. Lee, K.J. Choi, A. Hande, M.J. Kim, R.M. Wallace, J. Kim, Y. Senzaki, D. Shenai, H. Li, M. Rousseau, and J. Suydam, “A novel thermally-stable zirconium amidinate ALD precursor for ZrO2 thin films,” Microelectronic Engineering (2008) http://dx.doi.org/10.1016/j.mee.2008.03.020
  7. F.S. Aguirre-Tostado, M. Milojevic, K.J. Choi, H.C. Kim, C.L. Hinkle, E.M. Vogel, J. Kim, R.M. Wallace, T. Yang, Y. Xuan and P.D. Ye, “S-passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates,” Applied Physics Letters 93, 061907 (2008). http://dx.doi.org/10.1063/1.2961003
  8. C. L. Hinkle, A. M. Sonnet, M. Milojevic, F. S. Aguirre-Tostado, H. C. Kim, J. Kim, R. M. Wallace, and E. M. Vogel, “Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics ,” Applied Physics Letters 93, 113506 (2008). http://dx.doi.org/10.1063/1.2987428
  9. A. M. Sonnet, C. L. Hinkle, M. N. Jivani, R. A. Chapman, G. P. Pollack, R. M. Wallace, and E. M. Vogel, “Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer, “Applied Physics Letters 93, 122109 (2008). http://dx.doi.org/10.1063/1.2991340
  10. M. Milojevic , C.L.Hinkle, F. Aguirre-Tostado , H.C. Kim , E,M,Vogel, J. Kim, and R.M.Wallace, “Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces,” Applied Physics Letters 93 252905 (2008). http://dx.doi.org/10.1063/1.3054348
  11. A. Herrera-Gomez, F. S. Aguirre-Tostado, M. A. Quevedo-Lopez, P. D. Kirsch, M. J. Kim, and R. M. Wallace, “Thermal stability of nitrogen in nitrided HfSiO2 /SiO2/Si(001) ultrathin films,” Journal of Applied Physics 104, 103520 (2008). http://dx.doi.org/10.1063/1.3021051
  12. F. S. Aguirre-Tostado, M. Milojevic, B. Lee, J. Kim, and R. M. Wallace, “In situ study of surface reactions of atomic layer deposited LaxAl2−xO3 films on atomically clean In0.2Ga0.8As,” Applied Physics Letters 93, 172907 (2008). http://dx.doi.org/10.1063/1.3009303
  13. M. Milojevic , F. Aguirre-Tostado , C.L.Hinkle, H.C. Kim , E.M.Vogel, J. Kim, and R.M.Wallace, “Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces,” Applied Physics Letters 93 202902 (2008). http://dx.doi.org/10.1063/1.3033404
  14. A. M. Sonnet, C. L. Hinkle, M. N. Jivani, R. A. Chapman, G. P. Pollack, R. M. Wallace, and E. M. Vogel, “Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer, “Applied Physics Letters 93, 122109 (2008). http://dx.doi.org/10.1063/1.2991340

 

2007

  1. P. Zhao, M. J. Kim, B. E. Gnade, and R. M. Wallace, “Thermal stability studies of fully silicided NiSi on Si-oxynitride and Hf-based high-k gate stacks,”  Journal of Applied Physics 101, 053504 (2007). http://dx.doi.org/10.1063/1.2434808 
  2. H. Jia, E. K. Gross, R. M. Wallace, and B. E. Gnade, “Patterning effects on poly (3-hexylthiophene) organic thin film transistors using photolithographic processes,” Organic Electronics 8, 45 (2007). http://dx.doi.org/10.1016/j.orgel.2006.10.009
  3. P. Sivasubramani, J. Kim, M. J. Kim, B. E. Gnade, and R. M. Wallace, “Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100),” Journal of Applied Physics 101, 114108 (2007). http://dx.doi.org/10.1063/1.2743818
  4. C.Dreimeier, R.M.Wallace and I.J.R.Baumvol, “Oxygen species in HfO2 films: An in situ x-ray photoelectron spectroscopy study,” Journal of Applied Physics 102, 024112 (2007). http://dx.doi.org/10.1063/1.2759198
  5. Y.Ai, S. Gowrisanker, H. Jia, I.Trachtenberg, E.Vogel, R.M. Wallace, B. E. Gnade, R.Barnett, H.Stiegler, and H.Edwards, “14 MHz organic diodes fabricated using photolithographic processes,” Applied Physics Letters 90, 262105 (2007).  http://dx.doi.org/10.1063/1.2752533
  6. F.S. Aguirre-Tostado, D. Layton, A. Herrera-Gomez, J. Zhu, G. Larrieu, E. Maldonado, W.P. Kirk, M. Tao and R.M. Wallace, “X-ray Photoelectron Spectroscopy study of the oxidation of Se-passivated Si(001),” Journal of Applied Physics 102, 084901 (2007). http://dx.doi.org/10.1063/1.2794858
  7. T. Yang, Y. Xuan, D. Zemlyanov, T. Shen, Y. Q. Wu, J. M. Woodall, P. D. Ye, F. S. Aguirre-Tostado, M. Milojevic, S. McDonnell, and R. M. Wallace, “Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric,” Applied Physics Letters 91, 142122 (2007). http://dx.doi.org/10.1063/1.2798499
  8. C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, J. Kim, and R. M. Wallace, “Frequency dispersion reduction and bond conversion on n-type GaAs by in-situ surface oxide removal and passivation,” Applied Physics Letters 91, 163512 (2007). http://dx.doi.org/10.1063/1.2801512
  9. T. Zheng, H. Jia, R. M. Wallace, and B. E. Gnade, “C-V measurements of micron diameter metal-oxide-semiconductor capacitors using a scanning-electron-microscope-based nanoprobe,” Review of Scientific Instruments 78, 104702 (2007). http://dx.doi.org/10.1063/1.2789660
  10. A. Herrera-Gomez, F. S. Aguirre-Tostado, Y. Sun, R. Contreras-Guerrero, R. M. Wallace, Y. Hisao and E. Flint, “Quantification of pinhole density in ultrathin diamond-like carbon films,” Surf. Interface Anal. 39: 904 (2007). http://dx.doi.org/10.1002/sia.2622

2006

  1. P. Sivasubramani, T.H. Lee, M. J. Kim, J. Kim, B. E. Gnade, and R. M. Wallace, L. F. Edge and D. G. Schlom , F. A. Stevie, R. Garcia, Z. Zhu and D.P. Griffis, “The Thermal Stability of Lanthanum Scandate Dielectrics on Si (100),” Applied Physics Letters 89, 242907 (2006).  http://dx.doi.org/10.1063/1.2392992
  2. P. Sivasubramani, J. Kim, M. J. Kim, B. E. Gnade and R. M. Wallace, “The Effect of Nitrogen Incorporation on the Thermal Stability of Sputter Deposited Lanthanum Aluminate Dielectrics on Si (100),” Applied Physics Letters 89, 152903 (2006).  http://dx.doi.org/10.1063/1.2361170
  3. G. Pant , A. Gnade , M. Kim , R.M. Wallace , B.E.Gnade, M. Quevedo-Lopez , P. Kirsch , and S. Krishnan, “Comparison of electrical and chemical characteristics of ultrathin HfON vs. HfSiON dielectrics,” Applied Physics Letters 89, 032904 (2006).  http://dx.doi.org/10.1063/1.2226991
  4. P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, B. H. Lee, G. Pant, M. J. Kim, R. M. Wallace, and B. E. Gnade, “Mobility and Charge Trapping Comparison for Crystalline and Amorphous HfON and HfSiON Gate Dielectrics,” Applied Physics Letters 89 (2006) 242909. http://dx.doi.org/10.1063/1.2392992
  5. L. F. Edge, D.G .Schlom, P. Sivasubramani, R.M. Wallace, B. Holländer, and J.Schubert, “Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon,” Applied Physics Letters 88, 112907 (2006) http://dx.doi.org/10.1063/1.2182019
  6. T. Zheng, H. Jia, R.M. Wallace and B.E. Gnade, “Characterization of conductance under finite bias for a Self -Assembled Monolayer coated Au Quantized Point Contact,” Applied Surface Science 253, 1265 (2006).  http://dx.doi.org/10.1016/j.apsusc.2006.01.070
  7. T. Zheng, H. Jia, R.M. Wallace and B.E. Gnade, “Stabilization of Au Quantum Point Contacts by Self-Assembled Monolayers, ” Applied Surface Science 252, 8261 (2006). http://dx.doi.org/10.1016/j.apsusc.2005.10.061
  8. G. Pant , A. Gnade , M. Kim , R.M. Wallace , B.E.Gnade, M. Quevedo-Lopez , P. Kirsch, “Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics ,” Applied Physics Letters 88, 032901 (2006). http://dx.doi.org/10.1063/1.2165182
  9. H. Jia, G. K. Pant, E. K. Gross, R. M. Wallace, and B. E. Gnade, “Effect of poly (3-hexylthiophene) film thickness on organic thin film transistor properties,” Journal of Vacuum Science and Technology A24, 1228 (2006). http://dx.doi.org/10.1116/1.2202858
  10. H. N. Alshareef, K. Choi, H. C. Wen, H. Luan, H. Harris, Y. Senzaki, P. Majhi, B. H. Lee, R. Jammy, S. Aguirre-Tostado, B. E. Gnade, and R. M. Wallace, “Composition dependence of the work function of Ta1−xAlxNy metal gates,” Applied Physics Letters 88, 072108 (2006). http://dx.doi.org/10.1063/1.2174836
  11. P. Zhao, I.Trachtenberg, M.J. Kim, B.E. Gnade and R.M.Wallace, “Ni diffusion studies from fully-silicided NiSi into Si,” Electrochemical and Solid. State Letters 9, G111 (2006). http://dx.doi.org/10.1149/1.2167927
  12. H. Jia, G. K. Pant, E. K. Gross, R. M. Wallace, and B. E. Gnade, “Gate induced leakage and drain current offset in organic thin film transistors,” Organic Electronics 7, 16 (2006). http://dx.doi.org/10.1016/j.orgel.2005.10.003
  13. C. Driemeier, L. Miotti, I. J. R. Baumvol, C. Radtke, E. P. Gusev, M. J. Kim and R. M. Wallace, “Interaction of HfO2/SiO2/Si structures with deuterium gas,” Applied Physics Letters 88, 041918 (2006). http://dx.doi.org/10.1063/1.2168501
  14. G. Pant, A. Gnade, M. J. Kim, R.M. Wallace, B. E. Gnade, M.A. Quevedo-Lopez, and P.D. Kirsch, , “Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics,” Applied Physics Letters 88, 032901 (2006). http://dx.doi.org/10.1063/1.2165182

2005

  1. M. A. Quevedo-Lopez, S. A. Krishnan, P. D. Kirsch, G. Pant, B. E. Gnade, and R. M. Wallace, “Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability,” Applied Physics Letters 87, 262902 (2005). http://dx.doi.org/10.1063/1.2150586
  2. P. Sivasubramani, M. J. Kim, B. E. Gnade, R. M. Wallace, L. F. Edge, D. G. Schlom, H. S. Craft and J.-P. Maria, “Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001),” Applied Physics Letters 86 201901(2005). http://dx.doi.org/10.1063/1.1928316
  3. M. A. Quevedo-Lopez, S. A. Krishnan, P. D. Kirsch, G. Pant, B. E. Gnade, and R. M. Wallace, “Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability,” Applied Physics Letters 87, 262902 (2005). http://dx.doi.org/10.1063/1.2150586
  4. P. Sivasubramani, M. J. Kim, B. E. Gnade,  R. M. Wallace, L. F. Edge, D. G. Schlom, H. S. Craft and J.-P. Maria, “Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001),” Applied Physics Letters 86  201901 (2005). http://dx.doi.org/10.1063/1.1928316
  5. M.A. Quevedo-Lopez, M.R. Visokay, J.J. Chambers, M.J. Bevan, A. Lifatou, L. Colombo, M.J. Kim, B.E. Gnade, and R.M. Wallace, “Dopant Penetration Studies through Hf Silicate”, Journal of Applied Physics 97 043508 (2005). http://dx.doi.org/10.1063/1.1846138
  6. A. Ranade, N.A. D’Souza, R.M.Wallace and B.E.Gnade , “High Sensitivity Gas Permeability Measurement System for Thin Plastic Films,” Review of Scientific Instruments 76  013902 (2005). http://dx.doi.org/10.1063/1.1823792
  7. A.Jakubowicz, H. Jia, R.M.Wallace and B.E.Gnade, “Adsorption kinetics of p-Nitrobenzenethiol self-assembled monolayers on a gold surface,” Langmuir 21, 950 (2005). http://dx.doi.org/10.1021/la048308h
  8. C. Driemeier, K.P. Bastos, G.V. Soares, L. Miotti, R.P. Pezzi and J. Morais, I.J. R. Baumvol, R.M. Wallace, and B.E. Gnade, “Atomic transport and chemical stability of nitrogen in ultrathin HfSiON gate dielectrics,” Applied Physics A: Materials Science & Processing 80 1045 (2005). http://dx.doi.org/10.1007/s00339-004-3037-8

2004

  1. R.P. Pezzi, L. Miotti, K.P. Bastos, G.V. Soares, C. Driemeier, I.J.R. Baumvol, P. Punchaipetch, G. Pant, B.E. Gnade, R.M. Wallace, A. Rotondaro, J. M. Visokay, J. J. Chambers, and L. Colombo “Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon,” Applied Physics Letters 85  3504 (2004). http://dx.doi.org/10.1063/1.1801682
  2. R.M.Wallace, “Challenges for the characterization and integration of high-k dielectrics,” Applied Surface Science 231-232, 543 (2004). http://dx.doi.org/10.1016/j.apsusc.2004.03.056
  3. S. Addepalli, P. Sivasubramani, M. El-Bouanani, M. J. Kim, B. E. Gnade, and R. M. Wallace, “Deposition of Hf-silicate gate dielectric on SixGe1-x(100): Detection of interfacial layer growth”, Journal of Vacuum Science and Technology A22, 616 (2004). http://dx.doi.org/10.1116/1.1710494
  4. J. Wu, P. Punchaipetch, R.M. Wallace, and J.L. Coffer “Fabrication and optical properties of erbium-doped germanium nanowires ,”Advanced Materials 16 (16) 1444 (2004)
  5. R. Chan, T.N. Arunagiri, Y.Zhang, O. Chyan, R. M. Wallace, M. J. Kim, T.Q. Hurd, “Diffusion studies of copper on ruthenium thin film,” Electrochemical and Solid-State Letters 7(8) p. G154-7 (2004).
  6. Y. Zhang, L. Huang, T.N. Arunagiri, O. Ojeda, S. Flores, O. Chyan, and R.M. Wallace, “Underpotential deposition of copper on electrochemically prepared conductive ruthenium oxide surface,” Electrochemical and Solid-State Letters, 7(9) p. C107-10 (2004).
  7. S. Addepalli, P. Sivasubramani, M. J. Kim, B. E. Gnade, and R. M. Wallace, “The electrical properties and stability of the hafnium silicate-Si0.8Ge0.2(100) interface,” Journal of Electronic Materials 33 1016 (2004).
  8. G. Pant, P. Punchaipetch, M. J. Kim, R. M. Wallace and B. E. Gnade, “Low Temperature UV/ozone oxidation formation of HfSiON gate dielectric,” Thin Solid Films 460, 242 (2004).
  9. P. Punchaipetch, G. Pant, M. J. Kim, R. M. Wallace and B. E. Gnade, “Growth and characterization of hafnium silicate films prepared by UV/ozone oxidation,” Journal of Vacuum Science and Technology A 22, 395 (2004).
  10. P. Punchaipetch, Gaurang Pant, M. Quevedo-Lopez, C. Yao, M. El-Bouanani, M.J.Kim, R.M. Wallace and B.E. Gnade, “Low temperature deposition of hafnium silicate gate dielectrics”, IEEE Journal on Selected Topics in Quantum Electronics 10, 89 (2004) (Invited Paper). http://dx.doi.org/10.1109/JSTQE.2004.824109

2003

  1. R.M.Wallace and G. Wilk, “High-k Dielectric Materials for Microelectronics,” Critical Reviews in Solid State and Materials Sciences 28, 231 (2003) (Invited Review).
  2. M.J. Kim, J. Huang, D.K. Cha, M.A. Quevedo-Lopez, R.M. Wallace, and B.E. Gnade, “Thermal Stability of Hf-based High- κ Dielectric Films on Si(100),” Microsc. Microanal. 9(Suppl 2), (2003) 506.
  3. A.Q. Wang, P.Punchaipetch, R. M. Wallace and T. D. Golden, “X-ray photoelectron spectroscopy study of electrodeposited nanostructured CeO2 films,” Journal of Vacuum Science and Technology B 21(3) (2003) 1169.
  4. M. Quevedo-Lopez, M. El-Bouanani, M.J. Kim, B. E. Gnade, M.R. Visokay, A. LiFatou, M.J. Bevan, L. Colombo, and R. M. Wallace, “Boron Penetration from p+ Polycrystalline-Si through nitrided Hf-silicate films”, Applied Physics Letters 82, 4669 (2003).
  5. P. Punchaipetch, G. Pant, M. Quevedo-Lopez, H.Zhang, M. El-Bouanani, M.J.Kim, R.M. Wallace and B.E. Gnade. “Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide,” Thin Solid Films Letters 425 (2003) 68.

2002

  1. M. A. Quevedo-Lopez, M. El-Bouanani, R. M. Wallace and B. E. Gnade, “Wet Chemical Etching Studies of Zr and Hf-silicate Gate Dielectrics,” Journal of Vacuum Science and Technology A 20(6) (2002) 1891.
  2. M. A. Quevedo-Lopez, M. El-Bouanani, B. E. Gnade, R. M. Wallace, M. R. Visokay, M. Douglas, M. J. Bevan, and L. Colombo, “Interdiffusion Studies for HfSixOy and ZrSixOy on Si,” Journal of Applied Physics 92 (2002) 3540.
  3. M. A. Quevedo-Lopez, M. El-Bouanani, M. J. Kim, B. E. Gnade, R. M. Wallace, M. R. Visokay, A. LiFatou, M. J. Bevan, and L. Colombo, “ Phosphorus and Arsenic Penetration Studies through HfSixOy and HfSixOyNz films,” Applied Physics Letters 81 (2002) 1609. http://dx.doi.org/10.1063/1.1502910
  4. M. A. Quevedo-Lopez, M. El-Bouanani, M. J. Kim, B. E. Gnade, R. M. Wallace, M. R. Visokay, A. LiFatou, M. J. Bevan, and L. Colombo, “Boron Penetration Studies from p+ Polycrystalline-Si through HfSixOy,” Applied Physics Letters 81 1074 (2002).
  5. R.M.Wallace and G.D.Wilk, “High-k Gate Dielectric Materials”, MRS Bulletin (Special Issue), March (2002), pp.192-7.

2001

  1. M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J. L. Duggan, B. E. Gnade, R. M. Wallace, M.R.Visokay, M.Douglas, and L. Colombo, “Hafnium interdiffusion studies from hafnium silicate into Silicon,” Applied Physics Letters, 79  4192 (2001).
  2. M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J. L. Duggan, B. E. Gnade, R. M. Wallace, M.R.Visokay, M.Douglas, M.J.Bevan and L. Colombo, “Thermally induced Zr incorporation into Si from zirconium silicate thin films,” Applied Physics Letters, 79  2958 (2001). 
  3. G.D.Wilk, R.M.Wallace, and J.M.Anthony, “High-k Gate Dielectrics: Current Status and Materials Properties Considerations”, Journal of Applied Physics 89  5243 (2001) (invited review – >3100 citations as of Oct. 2011). http://dx.doi.org/10.1063/1.1361065
  4. Q.Zhang, S. Tang and R.M.Wallace, “Proton trapping and diffusion in SiO2 thin films: a first-principles study”, Applied Surface Science 172  41 (2001).

 2000

  1. G.D.Wilk and R.M.Wallace, “Stable Zirconium Silicate Gate Dielectrics Deposited Directly on Si”, Applied Physics Letters 76  112 (2000) (>250 citations as of Oct. 2011).  http://dx.doi.org/10.1063/1.125673
  2. G.D.Wilk, R.M.Wallace, and J.M.Anthony, “Hafnium and Zirconium Silicates for Advanced Gate Dielectrics”, Journal of Applied Physics 87  484 (2000) (>700 citations as of Oct. 2011). http://dx.doi.org/10.1063/1.371888

1999

  1. R.M.Wallace, P.J.Chen, L.B.Archer and J.M.Anthony, “Deuterium Sintering of SOI structures: D diffusion and replacement reactions at the SiO2/Si Interface”, Journal of Vacuum Science and Technology B 17  2153 (1999).
  2. P.J.Chen and R.M.Wallace. “Deuterium Transport through Device Structures”, Journal of Applied Physics 86  2237(1999).
  3. G.D.Wilk, and R.M.Wallace “Electrical Properties of Hafnium Silicate Gate Dielectrics Deposited Directly on Si”, Applied Physics Letters 74  2854 (1999) (>380 citations as of Oct. 2011). http://dx.doi.org/10.1063/1.124036
  4. R.M.Wallace and Y.Wei, “Dry Oxidation Resistance of Ultrathin Nitride Films: Ordered and Amorphous Silicon Nitride on Si(111)”, Journal of Vacuum Science and Technology B 17  970 (1999).
  5. B.R.Chalamala, R.M.Wallace and B.E.Gnade, “Interaction of Water with Spindt-type Mo Field Emitter Arrays”, Journal of Vacuum Science and Technology B 17  303 (1999).

1998

  1. P.J.Chen and R.M.Wallace, “Examination of Deuterium Transport through Device Structures”, Applied Physics Letters 73  3441 (1998).
  2. B.R.Chalamala, R.M.Wallace and B.E.Gnade, “Effect of Methane on the Electron Emission Characteristics of Active Mo Field Emitter Arrays”, Journal of Vacuum Science and Technology B16  3073 (1998).
  3. B.R.Chalamala, R.M.Wallace and B.E.Gnade, “Surface Conditioning of Active Molybdenum Field Emission cathode Arrays with Hydrogen and Helium”, Journal of Vacuum Science and Technology B16  2855 (1998).
  4. B.R.Chalamala, R.M.Wallace and B.E.Gnade, “Effect of Oxygen on the Electron Emission Characteristics of Active Mo Field Emission Cathode Arrays”, Journal of Vacuum Science and Technology B16  2859 (1998).
  5. B.R.Chalamala, R.M.Wallace and B.E.Gnade, “Poisoning of Spindt-type Molybdenum Field Emitter Arrays by CO2”, Journal of Vacuum Science and Technology B16  2866 (1998).
  6. B.Kaczer, H.-J.Ihm, J.P.Pelz and R.M.Wallace, “Microscopic characterization of hot-electron spreading and trapping in SiO2 films using ballistic electron emission microscopy”, Applied Physics Letters 73  1871 (1998).
  7. W.L.Warren, D.M.Fleetwood, J.R.Schwank, M.R.Shaneyfelt, B.L.Draper, P.S.Winokur, M.G.Knoll, K.Vanheusden, R.A.B.Devine, L.B.Archer, G.A.Brown and R.M.Wallace, “Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films”, Applied Physics Letters 73  674 (1998).
  8. P. J. Chen, R. M. Wallace, and S. A. Henck, "Thermal properties of perfluorinated n-alkanoic acids self-assembled on native aluminum oxide surfaces", Journal of Vacuum Science and Technology A 16  700 (1998).
  9. H. C. Mogul, L. Cong, R. M. Wallace, P. J. Chen, T. A. Rost, and K. Harvey, "Electrical and physical characterization of deuterium sinter on submicron devices", Applied Physics Letters 72 1721 (1998).
  10. S.Tang, R.M.Wallace, A.Seabaugh and D.King-Smith, “Evaluating the minimum thickness of gate oxide on silicon using first-principles method”, Applied Surface Science 135  137 (1998).

1997

  1. Z.H.Lu, J.P.McCaffery, B.Brar, G.D.Wilk, R.M.Wallace, L.C.Feldman and S.P.Tay, “SiO2 film thickness metrology by x-ray photoelectron spectroscopy”, Applied Physics Letters 71  2764 (1997). http://dx.doi.org/10.1063/1.120438
  2. Y.Wei, R.M.Wallace and A.C.Seabaugh, “Controlled growth of SiO2 tunnel barrier and crystalline Si quantum wells for Si resonant tunneling diodes”, Journal of Applied Physics 81  6415 (1997).
  3. W.L.Warren, D.M.Fleetwood, J.R.Schwank, M.R.Shaneyfelt, B.L.Draper, P.S.Winokur, M.G.Knoll, K.Vanheusden, R.A.B.Devine, L.B.Archer and R.M.Wallace, “Protonic Nonvolatile Field Effect Transistor Memories in Si/SiO2/Si structures”, IEEE Transactions in Nuclear Science 44  1789 (1997).
  4. S.Tang, Y.Wei and R.M.Wallace, “Energetics of void enlargement in thermally grown ultrathin Si-oxide on Si(001)”, Surface Science Letters 387  L1057 (1997).
  5. G.D.Wilk, Y.Wei, H.Edwards and R.M.Wallace, “In-situ Si flux cleaning technique for producing atomically flat Si(100) surfaces at low temperatures" Applied Physics Letters 70  2288 (1997).

<1996

  1. Y.Wei, R.M.Wallace and A.C.Seabaugh, “Void formation on ultrathin thermal silicon oxide films on the Si(100) surface”, Applied Physics Letters 69  1270 (1996).
  2. R.M.Wallace, P.J.Chen, S.A.Henck and D.A.Webb, “Adsorption of perfluorinated n-alkanoic acids on native aluminum oxide surfaces”, Journal of Vacuum Science and Technology A 13  1345 (1995).
  3. C.-C.Cho, R.M.Wallace and L.A.Files-Sesler, “Patterning and etching of amorphous teflon films”, Journal of Electronic Materials 23  827 (1994).
  4. C.C.Cheng, P.A.Taylor, R.M.Wallace, H.Gutleben, L.Clemen, M.L.Colaianni, P.J.Chen, W.H.Weinberg, W.J.Choyke and J.T.Yates, Jr., “Hydrocarbon surface chemistry on Si(100)”, Thin Solid Films 225  196 (1993).
  5. D.Weirauch, R.L.Strong, R.M.Wallace and D.Chopra, “An evaluation of the sessile drop technique for the study of (Hg,Cd)Te surfaces”, Semiconductor Science and Technology 8  916 (1993).
  6. L.Clemen, R.M.Wallace, P.A.Taylor, M.J.Dresser, W.J.Choyke, W.H.Weinberg and J.T.Yates, Jr., “Adsorption and thermal behavior of ethylene on Si(100)-(2x1)”, Surface Science 268  205 (1992) (175  citations as of Oct. 2011). http://dx.doi.org/10.1016/0039-6028(92)90963-7
  7. P.A.Taylor, R.M.Wallace, C.C.Cheng, W.H.Weinberg, M.J.Dresser, W.J.Choyke and J.T.Yates, Jr., “Adsorption and decomposition of acetylene on Si(100)-(2x1)”, Journal of the American Chemical Society 114  6754 (1992) (>145  citations as of Oct. 2011). http://dx.doi.org/10.1021/ja00043a020
  8. P.J.Chen, M.L.Colaianni, R.M.Wallace and J.T.Yates, Jr., “Dissociative adsorption of PH3 on Si(111)-(7x7): a high resolution electron energy loss spectroscopy study”, Surface Science 244  177 (1991).
  9. R.M.Wallace, P.A.Taylor, M.J.Dresser, W.J.Choyke and J.T.Yates, Jr., “Background effects in electron stimulated desorption ion angular distribution (ESDIAD) measurements on Si(111)-(7x7)”, Review of Scientific Instruments 62  720 (1991).
  10. R.M.Wallace, P.A.Taylor, W.J.Choyke and J.T.Yates, Jr., “An ESDIAD study of chemisorbed hydrogen on clean and H-exposed Si(111)-(7x7)”, Surface Science 239  1 (1990).
  11. R.M.Wallace, C.C.Cheng, P.A.Taylor, W.J.Choyke and J.T.Yates, Jr., “Ni impurity effects on hydrogen surface chemistry and etching of Si(111)”, Applied Surface Science 45  201 (1990).
  12. P.A.Taylor, R.M.Wallace, W.J.Choyke and J.T.Yates, Jr., “Adsorption and decomposition of PH3 on Si(111)-(7x7)”, Surface Science 238  1 (1990). http://dx.doi.org/10.1016/0039-6028(90)90060-L
  13. R.M.Wallace, P.A.Taylor, W.J.Choyke and J.T.Yates, Jr., “PH3 surface chemistry on Si(111)-(7x7): A study by Auger spectroscopy and electron stimulated desorption methods”, Journal of Applied Physics 68  3669 (1990).
  14. C.C.Cheng, R.M.Wallace, P.A.Taylor, W.J.Choyke and J.T.Yates, Jr., “Direct Determination of absolute monolayer coverages of chemisorbed C2H2 and C2H4 on Si(100)”, Journal of Applied Physics 67  3693 (1990) (140 citations as of Oct. 2011). http://dx.doi.org/10.1063/1.345326
  15. M.J.Dresser, P.A.Taylor, R.M.Wallace, W.J.Choyke and J.T.Yates, Jr., “The adsorption and decomposition of NH3 on Si(100) – detection of the NH2(a) species”, Surface Science 218 75 (1989) (>135 citations as of Oct. 2011). http://dx.doi.org/10.1016/0039-6028(89)90621-3
  16. P.A.Taylor, R.M.Wallace, W.J.Choyke, M.J.Dresser and J.T.Yates, Jr., “The dissociative adsorption of ammonia on Si(100)”, Surface Science Letters 215  L286 (1989).
  17. R.B.Irwin, R.M.Wallace, W.J.Choyke and R.A.Hoffman, “Sub-micron calibration for ion beam milling of thin films”, Nuclear Instruments and Methods in Physical Research B5 523 (1984).

Publications (Peer Reviewed Conference Proceedings) – R.M.Wallace

  1. W. Wang, C.L. Hinkle, E.M. Vogel, K. Cho, R.M. Wallace “Is interfacial chemistry correlated to gap states for high-k/III–V interfaces?” Microelectronic Engineering 88, 1061 (2011). http://dx.doi.org/10.1016/j.mee.2011.03.053
  2. A. Posadas, M. Berg, H. Seo, D.J. Smith, A.P. Kirk, D. Zhernokletov, R.M. Wallace, A. de Lozanne, and A.A. Demkov, “Strain-induced ferromagnetism in LaCoO3: Theory and growth on Si (100)” Microelectronic Engineering 88, 1444 (2011). http://dx.doi.org/10.1016/j.mee.2011.03.108
  3. E. M. Vogel, A. M. Sonnet, R. V. Galatage, M. Milojevic, C. L. Hinkle, and R. M. Wallace, "Electrical and Physical Properties of High-k Gate Dielectrics on InxGa1-xAs," Electrochemical Society Transactions 28(1), 209 (2010). http://dx.doi.org/10.1149/1.3375603
  4. E. O'Connor, B. Brennan, R. Contreras, M. Milojevic, K. Cherkaoui, S. Monaghan, S. B. Newcomb, M. E. Pemble, G. Hughes, R. M. Wallace, and P. K. Hurley, “(NH4)2S Passivation of High-k/In0.53Ga0.47As Interfaces: A Systematic Study of (NH4)2S Concentration” Electrochemical Society Transactions 28(1), 231 (2010) http://dx.doi.org/10.1149/1.3375606  
  5. B.E. Coss, W.-Y. Loh, J. Oh, G. Smith, C. Smith, H. Adhikari, B. Sassman, S. Parthasarathy, J. Barnett, P. Majhi, R. M. Wallace, J. Kim, R. Jammy, “CMOS Band-Edge Schottky Barrier Heights Using Dielectric-Dipole Mitigated (DDM) Metal/Si for Source/Drain Contact Resistance Reduction,” Symposium on VLSI Technology, Kyoto, Japan, (2009)  LINK
  6. A. Pirkle, Y. J. Chabal, L. Colombo, and R. M. Wallace, “In-situ Studies of High-κ Dielectrics for Graphene-Based Devices,” Electrochemical Society Transactions 19(5), 215 (2009) http://dx.doi.org/10.1149/1.3119545 
  7. C. L. Hinkle, M. Milojevic, A. M. Sonnet, H. C. Kim, J. Kim, E. M. Vogel, and R. M. Wallace, “Surface studies of III-V materials: oxidation control and device implications,” Electrochemical Society Transactions 19(5), 387 (2009) http://dx.doi.org/10.1149/1.3119561
  8. G. Lee, C. Gong, A. Pirkle, A. Venugopal, B. Lee, S.Y. Park, L. Goux, M. Acik, R. Guzman, Y. Chabal, J. Kim, E.M. Vogel, R. M. Wallace, M.J. Kim, L. Colombo, and K.J. Cho, “Materials Science of Graphene for Novel Device Applications,” Electrochemical Society Transactions 19(5), 185 (2009) http://dx.doi.org/10.1149/1.3119542
  9. B. Lee, G. Mordi, TJ. Park, Y. J. Chabal, K. J. Cho, E. M. Vogel, M. J. Kim, L. Colombo, R. M. Wallace, and J. Kim “Atomic-layer-deposited Al2O3 as gate dielectrics for graphene-based devices,” Electrochemical Society Transactions 19(5), 225 (2009) http://dx.doi.org/10.1149/1.3119546
  10. P.K. Hurley, E.O'Connor, S. Monaghan, R. Long, A. O'Mahony, I. M. Povey, K. Cherkaoui, J. MacHale, A. Quinn, G. Brammertz, M. M. Heyns, S. Newcomb, V.V. Afanas'ev, A. Sonnet, R. Galatage, N. Jivani, E. Vogel, R. M. Wallace, and M. Pemble, “Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53) Electrochemical Society Transactions 25(6), 113 (2009) http://dx.doi.org/10.1149/1.3206612
  11. T. Lee, H. Floresca, S.J. Kang, J.J. Sim, K.H. Song, H.-B. Kang, B.-Y. Lee, R. M. Wallace, B. E. Gnade, and M.J. Kim, “Fabrication Process for Double Barrier Si-Based Quantum Well Resonant Tunneling Diodes (RTD) by UHV Wafer Bonding “ Electrochemical Society Transactions 16, (8) 525 (2008) http://dx.doi.org/10.1149/1.2982907
  12. R.M.Wallace “In-Situ Studies of Interfacial Bonding of High- Dielectrics for CMOS Beyond 22nm” Electrochemical Society Transactions 16, (5) 255 (2008) http://dx.doi.org/10.1149/1.2981608
  13. C. Driemeier, R. Wallace, and I. Baumvol “Oxygen Species in HfO2 Films: An in Situ X-Ray Photoelectron Spectroscopy Study” Electrochemical Society Transactions 11, (4) 91 (2007) http://dx.doi.org/10.1149/1.2779551
  14. A.Chowdhury, J. Kim and R.M.Wallace “Alumina as a Hydrogen Barrier for FeRAM Devices,” Proceedings of the IEEE 8th Annual Non-Volatile Memory Technology Symposium, Albuquerque, New Mexico, November 10-13, 2007, pp.48-51 (2007)
  15. P. Sivasubramani, T.S. Böscke, J. Huang, C.D. Young, P.D. Kirsch, S.A. Krishnan, M.A. Quevedo-Lopez, S. Govindarajan, B.S. Ju, H.R. Harris, D.J. Lichtenwalner, J.S. Jur, A.I. Kingon, J. Kim, B.E. Gnade, R.M. Wallace, G. Bersuker, B.H. Lee and R. Jammy; “Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics,” Symposium on VLSI Technology, Kyoto, Japan, (2007).
  16. S. Govindarajan, T. S. Boscke, P. D. Kirsch, M. A. Quevedo-Lopez, P. Sivasubramani, S. C. Song, R. M. Wallace, B. E. Gnade, P.Y. Hung, Jimmy Price, U. Schroder, S. Ramanathan, B. H. Lee and R. Jammy “Higher Permittivity Rare Earth-Doped HfO2 and ZrO2 Dielectrics for Logic and Memory Applications,” IEEE VLSI-TSA International Symposium on VLSI Technology, System, and Applications, T.28, Hsinchu, Taiwan, April 23-25, 2007.
  17. P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, C. Krug, H. AlShareef, C. S. Park, R. Harris, N. Moumen, A. Neugroschel, G. Bersuker, B .H. Lee, J.G. Wang, G. Pant, B. E. Gnade, M. J. Kim, R. M. Wallace, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, and R. Jammy, “Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability,” IEEE Intl. Electron Dev. Meeting Technical Dig. (2006).
  18. P. McIntyre, D. Chi, C. O. Chui, H. Kim, Kang-Ill Seo, Krishna Saraswat, Raghavasimhan Sreenivasan, Takuya Sugawara, F. S. Aguirre-Testado, and R. M. Wallace, “Interface Layers for High-k/Ge Gate Stacks: Are They Necessary?,” ECS Transactions 3(7), 519-530 (2006). http://dx.doi.org/10.1149/1.2355849
  19. C.M. Osburn, S.A. Campbell, A. Demkov, E. Eisenbraun, E. Garfunkel, T. Gustafsson, A.I. Kingon, J. Lee, D.J. Lichtenwalner, G. Lucovsky, T.P. Ma, J.P. Maria, V. Misra, R.J. Nemanich, G.N. Parsons, D.G. Schlom, S. Stemmer, R.M. Wallace, and J. Whitten, "Materials and Processes for High k Gate Stacks: Results from the FEP Transition Center,", ECS Transactions, 3(3), 389 (2006). (Invited) http://dx.doi.org/10.1149/1.2355729
  20. M.J. Kim, T.H. Lee, J. Kim, R.M. Wallace and B.E. Gnade, "Si-based Resonant Tunneling Devices using UHV Wafer Bonding, ECS Transactions 3(6), 75 (2006). http://dx.doi.org/10.1149/1.2357056
  21. D.K. Cha, Bongki Lee, J. Huang, Jiyoung Kim, R.M. Wallace, B.E. Gnade, M.J. Kim, “Electrical characterization of a single TiO2 nanotube by using modified FIB/SEM,” Microscopy and Microanalysis 12(Supp 2), Chicago (2006)
  22. M. A. Quevedo-Lopez, P.D. Kirsch, S. Krishnan, H. N. Alshareef, J. Barnett, H. R. Harris, A.Neugroschel, F.S. Aguirre-Tostado, B. E. Gnade, M. J. Kim, R. M. Wallace, and B.H. Lee, “Systematic Gate Stack Optimization to Maximize Mobility with HfSiON EOT Scaling ,” 36th European Solid-State Device Research Conference, Montreaux, Switzerland (2006).
  23. P. Sivasubramiani, M. A. Quevedo-Lopez , T.H. Lee, M.J. Kim, B.E. Gnade, and R. M. Wallace, “Interdiffusion Studies of High-k Gate Dielectric Stack Constituents,” in Defects in Advanced High-κ Dielectric Nano-Electronic Semiconductor Devices, E. Gusev, ed., Springer, Netherlands, pp. 135-146, (2006).
  24. M. A. Quevedo-Lopez, S. A. Krishnan, P. D. Kirsch, H. J. Li, J. H. Sim, C. Huffman, J. J. Peterson, B .H. Lee, G. Pant, B. E. Gnade, M. J. Kim, R. M. Wallace, D. Guo, H. Bu, and T.P. Ma, “High Performance Gate First HfSiON Dielectric Satisfying 45nm Node Requirements,” 2005 IEEE International Electron Devices Meeting (IEDM) Technical Digest, 437, (2005).
  25. P. Zhao, J. kim, M.J. Kim, B.E. Gnade, and R.M. Wallace, “MoXSiYNZ Metal Gate Electrode with Tunable Work Function for Advanced CMOS,” Extended Abstracts of the International Conference on Solid State Devices and Materials, Kobe, Japan, A-8-1, pp 848-849 (2005).
  26. R.P.Pezzi, R.M.Wallace, M.Copel and I.J.R.Baumvol, “High Resolution Profiling Using Ion Scattering and Resonant Nuclear Reactions,” in Characterization and Metrology for ULSI Technology, AIP Conference Proceedings 788 (2005) 571.
  27. M.J.Kim, R.M.Wallace and B.E.Gnade, “HRTEM for Nano-Electronic Materials Research,” in Characterization and Metrology for ULSI Technology, AIP Conference Proceedings 788 (2005) 558.
  28. P. Sivasubramani, P.Zhao, M.J.Kim, B.E.Gnade, R.M.Wallace, L.F.Edge, D.G.Schlom, G.N.Parsons, and V.Misra, “Thermal Stability Studies of Advanced Gate Stack Streuctires on Si(100),” in Characterization and Metrology for ULSI Technology, AIP Conference Proceedings 788 (2005) 156.
  29. P.Zhao, J.Kim, M.J.Kim, B.E.Gnade and R.M.Wallace, “Thermally Stable MoxSiyNz as a Metal gate Electrode for Advanced CMOS Devices,” in Characterization and Metrology for ULSI Technology, AIP Conference Proceedings 788 (2005) 152.
  30. M.J. Kim, ,M.In Het Panhuis, R.Gupta, A.S. Blum, B.R. Ratna, B.E Gnade, and R.M. Wallace, Nano-patterning and manipulation of genetically engineered virus nanoblocks,” Microscopy and Microanalysis, 10, SUPPL. 2 26-27 (2004).
  31. I.S. Jeon, J. Lee, P. Zhao, P. Sivasurbramani, T. Oh, H.J. Kim, D.K. Cha, J. Huang, M.J. Kim, B.E. Gnade, J. Kim and R.M. Wallace, “A novel methodology of tuning work function of metal gate using stacking bi-metallic layers,” 2004 IEEE International Electron Devices Meeting (IEDM) Technical Digest, San Francisco, CA: Dec. 13-15, 303-306 (2004).
  32. M. Quevedo-Lopez, B.E.Gnade and R.M.Wallace, “Challenges for the Integration of High-k dielectrics,” Physics and Technology of High-k gate Dielectrics-I, S.Kar, D.Misra, R.Singh and F. Gonzalez, Editors, Proc. Vol. 2002-28, The Electrochemical Society, Pennington, NJ (2003).
  33. M. A. Quevedo-Lopez, M. El-Bouanani, B. E. Gnade, L. Colombo, M. Bevan, M. Douglas, M. Visokay and R. M. Wallace, “Interfacial Diffusion Studies of Hf and Zr into Si from Thermally Annealed Hf and Zr Silicates,” Materials Research Society Symposium Proceedings 686 (2002) 223 (A9.5.1).
  34. G.D.Wilk and R.M.Wallace, “Silicate Gate Dielectrics for scaled CMOS,” The Physics and Chemistry of SiO2 and Si-SiO2 interface – 4, H.Z.Massoud, I.J.R.Baumvol, M.Hirose and E.H.Poindexter, Editors, Proc. Vol. 2000-2, 464, The Electrochemical Society, Pennington, NJ (2000).
  35. P.E. Nicollian, M. Rodder, D.T.Grider, P. Chen, R.M.Wallace and S.V.Hattangady, “Low voltage stress-induced-leakage-current in ultrathin gate oxides,” IEEE International Reliability Physics Symposium Proceedings (1999) 400.
  36. P.J.Chen and R.M.Wallace, “Hydrogen/Deuterium interaction with CMOS transistor device structure: sintering process studied by SIMS,” in Hydrogen in Metals and Semiconductors, Materials Research Society Symposium Proceedings 513 (1998) 325.
  37. B.R. Chalamala, R.M.Wallace and B.E.Gnade, “Residual gas effects on the emission characteristics of active Mo field-emission cathode arrays,” 1998 SID International Symposium. Digest of Technical Papers. Vol. 29, 17-22 May 1998, Anaheim, CA, USA, 107-10
  38. V.A. Ukraintsev, F.R.Potts, R.M.Wallace, L.K.Magel, H.Edwards, M.-C.Chang, “Silicon surface preparation for two-dimensional dopant characterization,” AIP Conference Proceedings, no.449, 1998, Characterization and Metrology for ULSI Technology. 1998 International Conference, 23-27 March 1998, Gaithersburg, MD, USA, 736-40
  39. A Seabaugh, R.Lake, B. Brar, R.Wallace and G.Wilk, “Beyond the Roadmap technology: Silicon heterojunctions, optoelectronics and quantum devices,” Materials Research Society Symposium Proceedings 486 (1997) 67.
  40. H.L.Denton and R.M.Wallace, “Controlling polymer formation during polysilicon etching in a magnetically-enhanced reactive ion etcher,” Proceedings of the SPIE, 1803 (1993) 36.
  41. J.A.Spitznagel, B.O.Hall, N.J.Doyle, R.Jayaram, R.M.Wallace, J.R.Townsend and M.Miller, “Effects of nitrogen and helium ion implantation on uniaxial tensile properties of 316 SS foils,” Materials Research Society Symposium Proceedings 27 (1984) 597.

Publications (Conference Proceedings) – R.M.Wallace

  1. R.M.Wallace, “Critical Materials Issues for High-k Gate Dielectric Integration,” Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, Nagoya, Japan (2002), pp28-9.
  2. A Seabaugh, R.Lake, B. Brar, R.M.Wallace and G.Wilk, “Silicon-based Quantum MOS Technology”, Government Microcircuit Applications Conference Proceedings (1998).

Publications (Magazine Articles) – R.M.Wallace

  1. R.M.Wallace, P.C.MacIntyre, J. Kim, and Y. Nishi, “Atomic Layer Deposition of Dielectrics on Ge and III-V Materials for Ultrahigh Performance Transistors,” MRS Bulletin 34(7) 493 (2009).
  2. M.A. Quevedo-Lopez, S. Krishnan, P.D. Kirsch, H. N. Alshareef, B. E. Gnade, M. J. Kim, R.M. Wallace, B.H. Lee and R. Jammy, “Structure-Property Relationships in Ultrathin Hf-Based Gate Dielectrics,” Future Fab Intl. 21, 114-6 (2006).
  3. E.Garfunkel, T.Gustafsson, P.Lysaght, S.Stemmer, and R. Wallace,“Atomic Scale Materials Characterization Challenges in Advanced CMOS Gate Stacks,”  Future Fab Intl. 21, 126–9 (2006).
  4. M. Tao, R. M. Wallace, C. R. Cleavelin, R. L. Wise, “Silicon Complementary Metal-Oxide-Semiconductor Field-Effect Transistor,” The Electrochemical Society Interface, 14(2), pp26-27, (2005).
  5. R.M.Wallace and G.D.Wilk, “High-k Gate Dielectric Materials”, MRS Bulletin (Special Issue), March (2002), pp.192-7. (Also was issue co-editor)
  6. R.M.Wallace and G.D.Wilk, “Identifying the Most Promising High-k Gate Dielectrics”, Semiconductor International 24(7) July (2001), pp. 227-236.
  7. R.M.Wallace and G.D.Wilk, “Exploring the Limits of Gate Dielectric Scaling”, Semiconductor International 24(6) June (2001), pp. 543-550.
  8. R.M.Wallace and S.Tang, Designing materials by first-principles computational methods”, Texas-Instruments-Technical-Journal 12, no.5; Sept.-Oct. (1995) 66.
  9. M.Burkhart, B.Story, R.M.Wallace and B.Patrick , “The effects of prolonged exposure to aqueous ammonium hydroxide on polyvinylidene fluoride pipe”, Microcontamination , October (1992) 27.

Book Chapters – R.M.Wallace

  1. M.Milojevic, C.L.Hinkle, E.M. Vogel and R.M.Wallace, “Interfacial Chemistry of oxides on III-V Compound Semiconductors,”  in Fundamentals of Compound Semiconductor MOSFETs, P. Ye and S. Oktyabrsky Editors, (2009) Springer.
  2. R.M.Wallace and G.D.Wilk, “Materials Issues for High-k Gate Dielectric Selection and Integration”, in High-K Gate Dielectric Materials for VLSI MOSFET Applications, H.R.Huff and D.C.Gilmer, Editors, (2005), Springer-Verlag
  3. R.M.Wallace,“Dielectric Materials For Microelectronics,”  Handbook of Electronic and Optoelectronic Materials, S. Kasap and P. Capper, Editors, (2005), Springer.
  4. R.M.Wallace and O.A.Auciello, “Science and Technology of High-Dielectric Constant (K) Thin Films for Next Generation CMOS,” in Thin Films and Heterostructures for Oxide Electronics, S. B. Ogale, Editor (2005) Springer.

Edited Books – R.M.Wallace

  1. “Integration of Advanced Micro- and Nanoelectronic Devices – Critical Issues and Solutions,” J.Morais, D.Kumar, M. Houssa, R.K.Singh, D.Landheer, R. Ramesh, R.M.Wallace, and S.Guha Materials Research Society Symposium Proceedings, Vol 811, MRS, Warrendale, PA (2004).

 

 
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