Patents Issued as Inventor and Co-inventor  - R.M.Wallace

Patent Independent Citations as of September 2008: >1370

  1. 7,288,171 (2007) Method for using field emitter arrays in chemical and biological hazard mitigation and remediation:
    B.E.Gnade and R.M.Wallace

  2. 7,115,461 (2006) High permittivity silicate gate dielectric:
    J.M.Anthony, S.R.Summerfelt, G.D.Wilk and R.M.Wallace

  3. 7,030,038 (2006) Low Temperature Method for forming a thin, uniform oxide: G.D. Wilk, R.M.Wallace and B.P.S.Brar
  4. 6,933,235 (2005) Method for removing contaminants from a substrate:
    M. A. Quevedo-Lopez, R.M.Wallace, M. El-Bouanani, and B.E.Gnade
  5. 6,897,105 (2005) Method of forming metal oxide gate structures and capacitor electrodes:
    G.D.Wilk; R.M.Wallace; J.M. Anthony; and P. McIntyre
  6. 6,841,439 (2005) High permittivity silicate gate dielectric:
    J.M.Anthony, S.R.Summerfelt, G.D.Wilk and R.M.Wallace
  7. 6,784,507 (2004) Gate Structure and Method
    R.M.Wallace and B.E.Gnade
  8. 6,730,977 (2004) Lower temperature method for forming high quality silicon-nitrogen dielectrics
    G.D.Wilk, J.M.Anthony, Y.Wei, and R.M.Wallace
  9. 6,624,944 (2003) Fluorinated coating for an optical element
    R.M.Wallace, M.W.Cowens and S.A.Henck
  10. 6,613,698 (2003) Low temperature methods for forming high quality silicon-nitrogen dielectrics
    G.D. Wilk, J.M.Anthony, Y.Wei and R.M.Wallace
  11. 6,552,388 (2003) Hafnium Nitride Gate Dielectric
    G.D.Wilk and R.M.Wallace
  12. 6,468,856 (2002) High charge storage density integrated circuit capacitor R.M.Wallace, G.D.Wilk, M.Anthony, D-L. Kwong
  13. 6,436,801 (2002) Hafnium Nitride Gate Dielectric
    G.D.Wilk and R.M.Wallace
  14. 6,420,729 (2001) Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics
    R.M.Wallace, G.D. Wilk, Y.Wei and S.V.Hattangady
  15. 6,335,238 (2002) Integrated dielectric and method
    S.V.Hanttangady, R.M.Wallace, B.E.Gnade and Y.Okuno
  16. 6,291,867 (2001) Zirconium and/or hafnium silicon-oxynitride gate dielectric R.M.Wallace, R.A.Stolz and G.D. Wilk
  17. 6,291,866 (2001) Zirconium and/or hafnium oxynitride gate dielectric R.M.Wallace, R.A.Stolz and G.D. Wilk
  18. 6,277,681 (2001) Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics
    R.M.Wallace, G.D. Wilk, Y.Wei and S.V.Hattangady
  19. 6,274,510 (2001) Low temperature methods for forming high quality silicon-nitrogen dielectrics
    G.D. Wilk, J.M.Anthony, Y.Wei and R.M.Wallace
  20. 6,258,637 (2001) Method for thin film deposition on single-crystal semiconductor substrates
    G.D. Wilk, Y.Wei and R.M.Wallace
  21. 6,245,606 (2001) Low Temperature method for forming a thin, uniform layer of aluminum oxide
    G.D. Wilk and R.M.Wallace
  22. 6,159,829 (2000): Memory device using movement of protons
    W. L. Warren, K.L.Vanheusden, D.M.Fleetwood, R.A.B.Devine, L.B.Archer, G.A.Brown, R.M.Wallace
  23. 6,150,242 (2000): Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode J.P.Van der Wagt, G.D.Wilk and R.M.Wallace
  24. 6,143,634 (2000): Semiconductor process with deuterium predominance at high temperature
    R.M.Wallace and P.J.Chen
  25. 6,140,243 (2000): Low temperature process for post-etch defluoridation of metals
    R.M.Wallace, P.J.Chen, S.C.Baber, S.A.Henck
  26. 6,071,751 (2000): Deuterium Sintering with Rapid Quenching
    R.M.Wallace and K.C.Harvey
  27. 6,040,230 (2000): Method of forming a nano-rugged silicon-containing layer J.M.Anthony, R.M.Wallace, Y.Wei and G.D.Wilk
  28. 6,024,801 (2000): Method of cleaning and treating a semiconductor device including a micromechanical device.
    R.M.Wallace and M.A.Douglas
  29. 6,020,247 (2000): Method for thin film deposition on single-crystal semiconductor substrates
    G.D.Wilk, Y.Wei and R.M.Wallace
  30. 6,020,243 (2000): Zirconium and/or Hafnium Silicon-Oxynitride Gate Dielectric R.M.Wallace, R.A.Stolz and G.D.Wilk
  31. 6,013,553 (2000): Zirconium and/or Hafnium Oxynitride Gate Dielectric R.M.Wallace, R.A.Stolz and G.D.Wilk
  32. 5,830,532 (1998): Method to Produce Ultrathin Porous Silicon-Oxide Layer S.Tang, R.M.Wallace, and Y.Wei
  33. 5,689,151 (1997): Anode plate for Flat Panel Display having integrated getter R.M.Wallace, J.M.Anthony, C.-C.Cho, B.E. Gnade
  34. 5,614,785 (1997): Anode plate for Flat Panel Display having silicon getter R.M.Wallace, B.E.Gnade and W.P.Kirk
  35. 5,610,438 (1997): Micro-mechanical device with non-evaporable getter R.M.Wallace and D.A.Webb
  36. 5,606,177 (1997): Silicon oxide resonant tunneling diode structure
    R.M.Wallace and A. C. Seabaugh
  37. 5,523,878 (1996): Self-Assembled Monolayer Coating for Micro-Mechanical Devices
    R.M.Wallace, D.A.Webb and B.E.Gnade
  38. 5,520,563 (1996): Method of making a field emission device anode having an integrated getter
    R.M.Wallace, B.E. Gnade, C.C. Shen, J. D.Levine, and R.H. Taylor
  39. 5,512,374 (1996): PFPE Coatings for Micro-mechanical Devices R.M.Wallace, S.A.Henck and D.A.Webb
  40. 5,482,564 (1996): Method of Unsticking Components of Micro-mechanical Devices
    M.A.Douglas and R.M.Wallace
  41. 5,453,659 (1995): Anode plate for Flat Panel Display having integrated getter R.M.Wallace, B.E. Gnade, C.C. Shen, J. D.Levine, and R.H. Taylor
  42. 5,352,330 (1994): Process for Producing Nanometer-Size Structures on Surfaces Using Electron Beam Induced Chemistry through Electron Stimulated Desorption R.M.Wallace
  43. 5,316,793 (1994): Directed Effusive Beam Atomic Layer Epitaxy System and Method
    R.M.Wallace and B.E.Gnade

 

 
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