Patents Issued as Inventor and Co-inventor  - R.M.Wallace

Patent Independent Citations as of December 2012: >2000

  1. 8,461,028 (2013) Synthesizing Graphene from Metal-Carbon Solutions Using Ion Implantation:
    L. Colombo, R.M. Wallace, and R. Ruoff

  2. 8,309,438 (2012) Synthesizing Graphene from Metal-Carbon Solutions Using Ion Implantation:
    L. Colombo, R.M. Wallace, and R. Ruoff

  3. 7,288,171 (2007) Method for using field emitter arrays in chemical and biological hazard mitigation and remediation:
    B.E.Gnade and R.M.Wallace

  4. 7,115,461 (2006) High permittivity silicate gate dielectric:
    J.M.Anthony, S.R.Summerfelt, G.D.Wilk and R.M.Wallace

  5. 7,030,038 (2006) Low Temperature Method for forming a thin, uniform oxide: G.D. Wilk, R.M.Wallace and B.P.S.Brar
  6. 6,933,235 (2005) Method for removing contaminants from a substrate:
    M. A. Quevedo-Lopez, R.M.Wallace, M. El-Bouanani, and B.E.Gnade
  7. 6,897,105 (2005) Method of forming metal oxide gate structures and capacitor electrodes:
    G.D.Wilk; R.M.Wallace; J.M. Anthony; and P. McIntyre
  8. 6,841,439 (2005) High permittivity silicate gate dielectric:
    J.M.Anthony, S.R.Summerfelt, G.D.Wilk and R.M.Wallace
  9. 6,784,507 (2004) Gate Structure and Method
    R.M.Wallace and B.E.Gnade
  10. 6,730,977 (2004) Lower temperature method for forming high quality silicon-nitrogen dielectrics
    G.D.Wilk, J.M.Anthony, Y.Wei, and R.M.Wallace
  11. 6,624,944 (2003) Fluorinated coating for an optical element
    R.M.Wallace, M.W.Cowens and S.A.Henck
  12. 6,613,698 (2003) Low temperature methods for forming high quality silicon-nitrogen dielectrics
    G.D. Wilk, J.M.Anthony, Y.Wei and R.M.Wallace
  13. 6,552,388 (2003) Hafnium Nitride Gate Dielectric
    G.D.Wilk and R.M.Wallace
  14. 6,468,856 (2002) High charge storage density integrated circuit capacitor R.M.Wallace, G.D.Wilk, M.Anthony, D-L. Kwong
  15. 6,436,801 (2002) Hafnium Nitride Gate Dielectric
    G.D.Wilk and R.M.Wallace
  16. 6,420,729 (2001) Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics
    R.M.Wallace, G.D. Wilk, Y.Wei and S.V.Hattangady
  17. 6,335,238 (2002) Integrated dielectric and method
    S.V.Hanttangady, R.M.Wallace, B.E.Gnade and Y.Okuno
  18. 6,291,867 (2001) Zirconium and/or hafnium silicon-oxynitride gate dielectric R.M.Wallace, R.A.Stolz and G.D. Wilk
  19. 6,291,866 (2001) Zirconium and/or hafnium oxynitride gate dielectric R.M.Wallace, R.A.Stolz and G.D. Wilk
  20. 6,277,681 (2001) Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics
    R.M.Wallace, G.D. Wilk, Y.Wei and S.V.Hattangady
  21. 6,274,510 (2001) Low temperature methods for forming high quality silicon-nitrogen dielectrics
    G.D. Wilk, J.M.Anthony, Y.Wei and R.M.Wallace
  22. 6,258,637 (2001) Method for thin film deposition on single-crystal semiconductor substrates
    G.D. Wilk, Y.Wei and R.M.Wallace
  23. 6,245,606 (2001) Low Temperature method for forming a thin, uniform layer of aluminum oxide
    G.D. Wilk and R.M.Wallace
  24. 6,159,829 (2000): Memory device using movement of protons
    W. L. Warren, K.L.Vanheusden, D.M.Fleetwood, R.A.B.Devine, L.B.Archer, G.A.Brown, R.M.Wallace
  25. 6,150,242 (2000): Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode J.P.Van der Wagt, G.D.Wilk and R.M.Wallace
  26. 6,143,634 (2000): Semiconductor process with deuterium predominance at high temperature
    R.M.Wallace and P.J.Chen
  27. 6,140,243 (2000): Low temperature process for post-etch defluoridation of metals
    R.M.Wallace, P.J.Chen, S.C.Baber, S.A.Henck
  28. 6,071,751 (2000): Deuterium Sintering with Rapid Quenching
    R.M.Wallace and K.C.Harvey
  29. 6,040,230 (2000): Method of forming a nano-rugged silicon-containing layer J.M.Anthony, R.M.Wallace, Y.Wei and G.D.Wilk
  30. 6,024,801 (2000): Method of cleaning and treating a semiconductor device including a micromechanical device.
    R.M.Wallace and M.A.Douglas
  31. 6,020,247 (2000): Method for thin film deposition on single-crystal semiconductor substrates
    G.D.Wilk, Y.Wei and R.M.Wallace
  32. 6,020,243 (2000): Zirconium and/or Hafnium Silicon-Oxynitride Gate Dielectric R.M.Wallace, R.A.Stolz and G.D.Wilk
  33. 6,013,553 (2000): Zirconium and/or Hafnium Oxynitride Gate Dielectric R.M.Wallace, R.A.Stolz and G.D.Wilk
  34. 5,830,532 (1998): Method to Produce Ultrathin Porous Silicon-Oxide Layer S.Tang, R.M.Wallace, and Y.Wei
  35. 5,689,151 (1997): Anode plate for Flat Panel Display having integrated getter R.M.Wallace, J.M.Anthony, C.-C.Cho, B.E. Gnade
  36. 5,614,785 (1997): Anode plate for Flat Panel Display having silicon getter R.M.Wallace, B.E.Gnade and W.P.Kirk
  37. 5,610,438 (1997): Micro-mechanical device with non-evaporable getter R.M.Wallace and D.A.Webb
  38. 5,606,177 (1997): Silicon oxide resonant tunneling diode structure
    R.M.Wallace and A. C. Seabaugh
  39. 5,523,878 (1996): Self-Assembled Monolayer Coating for Micro-Mechanical Devices
    R.M.Wallace, D.A.Webb and B.E.Gnade
  40. 5,520,563 (1996): Method of making a field emission device anode having an integrated getter
    R.M.Wallace, B.E. Gnade, C.C. Shen, J. D.Levine, and R.H. Taylor
  41. 5,512,374 (1996): PFPE Coatings for Micro-mechanical Devices R.M.Wallace, S.A.Henck and D.A.Webb
  42. 5,482,564 (1996): Method of Unsticking Components of Micro-mechanical Devices
    M.A.Douglas and R.M.Wallace
  43. 5,453,659 (1995): Anode plate for Flat Panel Display having integrated getter R.M.Wallace, B.E. Gnade, C.C. Shen, J. D.Levine, and R.H. Taylor
  44. 5,352,330 (1994): Process for Producing Nanometer-Size Structures on Surfaces Using Electron Beam Induced Chemistry through Electron Stimulated Desorption R.M.Wallace
  45. 5,316,793 (1994): Directed Effusive Beam Atomic Layer Epitaxy System and Method
    R.M.Wallace and B.E.Gnade

 

 

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