DATE:	4/27/2009		RECIPE:	LTO.004		Operator	Gordon
TUBE #:	T4		FILE:
Process:	Low Temperature Oxide
TEMPL:	450	DEP TIME	30	min
TEMPC:	450	GAS	SiH4	GAS	O2	PRCPR	250 mtorr
TEMPS:	450	FLOW	85	FLOW	120
WAFER:	4" SILICON
SIZE	100mm	Substrate:	<100>
LOAD	13	Comment:
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
7	7687	7426	7466	7544	7007	7426.0	254.56	3.43	4.58
						Dep Rate:	233.57	A/min