DATE:	1/7/2009		RECIPE:	LTO.004		Operator	Gordon
TUBE #:	T4		FILE:
Process:	Low Temperature Oxide
TEMPL:	450	DEP TIME	30	min
TEMPC:	450	GAS	SiH4	GAS	O2	PRCPR	250 mtorr
TEMPS:	450	FLOW	85	FLOW	120
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	13	Comment:
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
7	7149	6789	6725	7213	6560	6887.2	281.82	4.09	4.74
				Wafer to	Wafer	6887.2	281.82	4.09	4.74
						Dep Rate:	229.57	A/min