DATE:	11/10/2008		RECIPE:	LTO.004		Operator	Gordon
TUBE #:	T4		FILE:
Process:	Low Temperature Oxide
TEMPL:	450	DEP TIME	30	min
TEMPC:	450	GAS	SiH4	GAS	O2	PRCPR	250 mtorr
TEMPS:	450	FLOW	85	FLOW	120
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	13	Comment:
POSITION	1CENTER	2TOP	3BOTTOM	4RIGHT	5LEFT	Mean Avg	S1 Dev	+ or - %	HI-LO%
7	6085	5851	5714	6038	5550	5847.6	223.07	3.81	4.57
				Wafer to	Wafer	5847.6	223.07	3.81	4.57
						Dep Rate:	194.92	A/min