DATE:	7/28/2008		RECIPE:	LTO.004		Operator	Gordon
TUBE #:	T4		FILE:
Process:	Low Temperature Oxide
TEMPL:	450	DEP TIME	30	min
TEMPC:	450	GAS	SiH4	GAS	O2	PRCPR	250 mtorr
TEMPS:	450	FLOW	85	FLOW	120
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	13	Comment:
POSITION	1CENTER	2TOP	3BOTTOM	4RIGHT	5LEFT	Mean Avg	S1 Dev	+ or - %	HI-LO%
7	5766	5648	5465	5615	5364	5571.6	158.09	2.84	3.61
				Wafer to	Wafer	5571.6	158.09	2.84	3.61
						Dep Rate:	185.72	A/min