DATE:	6/9/2008		RECIPE:	LTO.004		Operator	Gordon
TUBE #:	T4		FILE:
Process:	Low Temperature Oxide
TEMPL:	450	DEP TIME	30	min
TEMPC:	450	GAS	SiH4	GAS	O2	PRCPR	250 mtorr
TEMPS:	450	FLOW	85	FLOW	120
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	13	Comment:
POSITION	1CENTER	2TOP	3BOTTOM	4RIGHT	5LEFT	Mean Avg	S1 Dev	+ or - %	HI-LO%
7	5752	5622	5386	5815	5251	5565.2	240.50	4.32	5.07
				Wafer to	Wafer	5565.2	240.50	4.32	5.07
						Dep Rate:	185.51	A/min