DATE:	2/21/2008		RECIPE:	LTO.004		Operator	Gordon
TUBE #:	T4		FILE:
Process:	Low Temperature Oxide
TEMPL:	450	DEP TIME	30	min
TEMPC:	450	GAS	SiH4	GAS	O2	PRCPR	250 mtorr
TEMPS:	450	FLOW	85	FLOW	120
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	13	Comment:
POSITION	1CENTER	2TOP	3BOTTOM	4RIGHT	5LEFT	Mean Avg	S1 Dev	+ or - %	HI-LO%
3	4311	4593	4174	4457	4305	4368.0	160.78	3.68	4.80
7	5552	5517	5210	5757	5144	5436.0	254.66	4.68	5.64
11	5769	6121	5353	5769	5280	5658.4	344.57	6.09	7.43
				Wafer to	Wafer	5154.1	632.25	12.27	18.89
						Dep Rate:	171.80	A/min