| DATE: |
6/21/2005 |
|
RECIPE: |
LTO.004 |
|
Operator |
Gordon |
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| TUBE #: |
T4 |
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FILE: |
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| Process: |
Low Temperature Oxide |
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| TEMPL: |
450 |
DEP TIME |
87 |
min |
|
| TEMPC: |
450 |
GAS |
SiH4 |
GAS |
O2 |
PRCPR |
250 mtorr |
|
| TEMPS: |
450 |
FLOW |
85 |
FLOW |
120 |
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| WAFER: |
SILICON |
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| SIZE |
75mm |
Substrate: |
100 |
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| LOAD |
9 |
Comment: |
Refractive index = 1.44 |
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| POSITION |
1CENTER |
2TOP |
3BOTTOM |
4RIGHT |
5LEFT |
Mean Avg |
S1 Dev |
+ or - % |
HI-LO% |
| 2 |
39750 |
39980 |
43000 |
|
|
40910.0 |
1813.64 |
4.43 |
3.97 |
| 3 |
43000 |
39680 |
45110 |
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|
42596.7 |
2737.38 |
6.43 |
6.37 |
| 4 |
45150 |
39440 |
47800 |
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|
44130.0 |
4272.32 |
9.68 |
9.47 |
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Wafer to |
Wafer |
42545.6 |
3033.87 |
7.13 |
9.82 |
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Dep Rate: |
489.03 |
A/min |
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