| DATE: |
6/15/2005 |
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RECIPE: |
LTO.004 |
|
Operator |
Gordon |
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| TUBE #: |
T4 |
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FILE: |
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| Process: |
Low Temperature Oxide |
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| TEMPL: |
450 |
DEP TIME |
30 |
min |
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| TEMPC: |
450 |
GAS |
SiH4 |
GAS |
O2 |
PRCPR |
250 mtorr |
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| TEMPS: |
450 |
FLOW |
85 |
FLOW |
120 |
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| WAFER: |
4" SILICON |
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| SIZE |
100mm |
Substrate: |
100 |
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| LOAD |
25 |
Comment: |
Refractive index = 1.44 |
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| POSITION |
1CENTER |
2TOP |
3BOTTOM |
4RIGHT |
5LEFT |
Mean Avg |
S1 Dev |
+ or - % |
HI-LO% |
| 2 |
8376 |
8880 |
9614 |
8772 |
9089 |
8946.2 |
454.48 |
5.08 |
6.92 |
| 8 |
8033 |
8197 |
8733 |
8126 |
8392 |
8296.2 |
277.51 |
3.35 |
4.22 |
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Wafer to |
Wafer |
8621.2 |
493.35 |
5.72 |
9.17 |
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Dep Rate: |
287.37 |
A/min |
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