| DATE: |
6/10/2005 |
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RECIPE: |
LTO.004 |
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Operator |
Henry |
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| TUBE #: |
T4 |
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FILE: |
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| Process: |
Low Temperature Oxide |
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| TEMPL: |
450 |
DEP TIME |
30 |
min |
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| TEMPC: |
450 |
GAS |
SiH4 |
GAS |
O2 |
PRCPR |
250 mtorr |
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| TEMPS: |
450 |
FLOW |
85 |
FLOW |
120 |
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| WAFER: |
4" SILICON |
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| SIZE |
100mm |
Substrate: |
100 |
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| LOAD |
25 |
Comment: |
Refractive index = 1.44 |
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| POSITION |
1CENTER |
2TOP |
3BOTTOM |
4RIGHT |
5LEFT |
Mean Avg |
S1 Dev |
+ or - % |
HI-LO% |
| 2 |
9420 |
9123 |
10435 |
9259 |
9738 |
9595.0 |
522.58 |
5.45 |
6.84 |
| 8 |
8768 |
8356 |
9771 |
8679 |
8920 |
8898.8 |
529.44 |
5.95 |
7.95 |
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Wafer to |
Wafer |
9246.9 |
616.92 |
6.67 |
11.24 |
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Dep Rate: |
308.23 |
A/min |
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