| DATE: |
6/9/2005 |
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RECIPE: |
LTO.004 |
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Operator |
Henry |
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| TUBE #: |
T4 |
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FILE: |
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| Process: |
Low Temperature Oxide |
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| TEMPL: |
450 |
DEP TIME |
30 |
min |
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| TEMPC: |
450 |
GAS |
SiH4 |
GAS |
O2 |
PRCPR |
250 mtorr |
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| TEMPS: |
450 |
FLOW |
85 |
FLOW |
120 |
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| WAFER: |
4" SILICON |
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| SIZE |
100mm |
Substrate: |
100 |
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| LOAD |
25 |
Comment: |
Refractive index = 1.46 |
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| POSITION |
1CENTER |
2TOP |
3BOTTOM |
4RIGHT |
5LEFT |
Mean Avg |
S1 Dev |
+ or - % |
HI-LO% |
| 2 |
8526 |
8791 |
9164 |
8801 |
8556 |
8767.6 |
255.90 |
2.92 |
3.64 |
| 8 |
8045 |
8312 |
8618 |
8242 |
7997 |
8242.8 |
247.54 |
3.00 |
3.77 |
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Wafer to |
Wafer |
8505.2 |
364.48 |
4.29 |
6.86 |
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Dep Rate: |
283.51 |
A/min |
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