| DATE: | 11/10/2008 | RECIPE: | 10nm Oxide | Operator | Gordon | ||||
| TUBE: | MiniBrute T4 | ||||||||
| Process: | 10 nm gate oxide | ||||||||
| TEMPL: | 900 | Oxidation | 26 | min | |||||
| TEMPC: | 900 | GAS | O2 | ||||||
| TEMPS: | 900 | FLOW | 4 l/min | ||||||
| WAFER: | P-Type 10 Ohm/cm | ||||||||
| SIZE | 100mm | Substrate: | <100> | ||||||
| LOAD | 5 | Comment | Ellipsometer | ||||||
| POSITION | CENTER | TOP | LEFT | FLAT | RIGHT | Average | S1 Dev | + or - % | HI-LO% |
| 13 | 97.2 | 95.5 | 95.7 | 92.1 | 101.2 | 96.3 | 3.30 | 3.42 | 4.72 |