DATE:	5/21/2008		RECIPE:	PPOLY.003		Operator	Gordon
TUBE #:	T3		FILE:
Process:	Phosphorus Doped POLY
TEMPL:	625	DEP TIME	30	min
TEMPC:	630	GAS	SiH4	GAS	15% PH3	PRCPR	250 mtorr
TEMPS:	635	FLOW	150	FLOW	80
WAFER:	1000A SIO On Silicon
SIZE	100mm	Substrate:	100
LOAD	13	Comment:	T= 5552A with no PH3
POSITION	1CENTER	2TOP	3BOTTOM	4RIGHT	5LEFT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	3205	3285	3442	3838	3190	3392.0	268.63	7.92	9.55
						Dep Rate:	113.07	A/min
				Sheet resistance after 950C 30 min Diffusion:			24.14+/- 1.2%		Ohm/sq