DATE:	1/13/2009		RECIPE:	BPOLY.003		Operator	Gordon
TUBE #:	T3		FILE:
Process:	Boron Doped POLY
TEMPL:	625	DEP TIME	30	min
TEMPC:	630	GAS	SiH4	GAS	BCl3	PRCPR	250 mtorr
TEMPS:	635	FLOW	200	FLOW	6
WAFER:	1000A SIO On Silicon
SIZE	100mm	Substrate:	100
LOAD	13	Comment:
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	5302	5301	5331	5355	5279	5313.6	29.61	0.56	0.72
						Dep Rate:	177.12	A/min
			Sheet resistance after 950C 30 min Diffusion:			88.7 +/- 01.33%		Ohm/sq