DATE:	4/27/2009		RECIPE:	POLY.002		Operator	Gordon
TUBE #:	T2		FILE:
Process:	LARGE GRAIN POLY
TEMPL:	625	DEP TIME	30	min
TEMPC:	630	GAS	SiH4	GAS		PRCPR	250 mtorr
TEMPS:	635	FLOW	75	FLOW
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
13	4510	4491	4510	4548	4535	4518.8	22.60	0.50	0.63
				Wafer to	Wafer	4518.8	22.60	0.50	0.63
						Dep Rate:	150.63	A/min