DATE:	6/10/2008		RECIPE:	POLY.002		Operator	Gordon
TUBE #:	T2		FILE:
Process:	LARGE GRAIN POLY
TEMPL:	625	DEP TIME	30	min
TEMPC:	630	GAS	SiH4	GAS		PRCPR	250 mtorr
TEMPS:	635	FLOW	75	FLOW
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
13	4241	4216	4249	4552	4246	4300.8	141.03	3.28	3.91
				Wafer to	Wafer	4300.8	141.03	3.28	3.91
						Dep Rate:	143.36	A/min