DATE:	1/3/2008		RECIPE:	POLY.002		Operator	Gordon
TUBE #:	T2		FILE:
Process:	LARGE GRAIN POLY
TEMPL:	625	DEP TIME	30	min
TEMPC:	630	GAS	SiH4	GAS		PRCPR	250 mtorr
TEMPS:	635	FLOW	75	FLOW
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	4291	4269	4292	4351	5305	4501.6	450.14	10.00	11.51
20	4125	4102	4126	4182	4188	4144.6	38.17	0.92	1.04
				Wafer to	Wafer	4323.1	355.12	8.21	13.91
						Dep Rate:	144.10	A/min