| DATE: | 12/4/2007 | RECIPE: | POLY.002 | Operator | Gordon | ||||
| TUBE #: | T2 | FILE: | |||||||
| Process: | LARGE GRAIN POLY | ||||||||
| TEMPL: | 625 | DEP TIME | 30 | min | |||||
| TEMPC: | 630 | GAS | SiH4 | GAS | PRCPR | 250 mtorr | |||
| TEMPS: | 635 | FLOW | 75 | FLOW | |||||
| WAFER: | 4" SILICON | ||||||||
| SIZE | 100mm | Substrate: | 100 | ||||||
| LOAD | 25 | Comment | Refractive index = 3.18, Good run | ||||||
| POSITION | CENTER | TOP | LEFT | BOTTOM | RIGHT | Mean Avg | S1 Dev | + or - % | HI-LO% |
| 5 | 4431 | 4415 | 4437 | 4502 | 4461 | 4449.2 | 33.83 | 0.76 | 0.98 |
| 20 | 4307 | 4288 | 4321 | 4387 | 4358 | 4332.2 | 39.95 | 0.92 | 1.14 |
| Wafer to | Wafer | 4390.7 | 70.85 | 1.61 | 2.44 | ||||
| Dep Rate: | 146.36 | A/min | |||||||