| DATE: | 10/30/2007 | RECIPE: | POLY.002 | Operator | Gordon | ||||
| TUBE #: | T2 | FILE: | |||||||
| Process: | LARGE GRAIN POLY | ||||||||
| TEMPL: | 625 | DEP TIME | 30 | min | |||||
| TEMPC: | 630 | GAS | SiH4 | GAS | PRCPR | 250 mtorr | |||
| TEMPS: | 635 | FLOW | 75 | FLOW | |||||
| WAFER: | 4" SILICON | ||||||||
| SIZE | 100mm | Substrate: | 100 | ||||||
| LOAD | 25 | Comment | Refractive index = 3.18, Good run | ||||||
| POSITION | CENTER | TOP | LEFT | BOTTOM | RIGHT | Mean Avg | S1 Dev | + or - % | HI-LO% |
| 5 | 4522 | 4597 | 4504 | 4538 | 4551 | 4542.4 | 35.23 | 0.78 | 1.02 |
| 20 | 4397 | 4480 | 4374 | 4416 | 4447 | 4422.8 | 41.69 | 0.94 | 1.20 |
| Wafer to | Wafer | 4482.6 | 72.78 | 1.62 | 2.49 | ||||
| Dep Rate: | 149.42 | A/min | |||||||