DATE:	8/24/2005		RECIPE:	POLY.002		Operator	Gordon
TUBE #:	T2		FILE:
Process:	LARGE GRAIN POLY
TEMPL:	625	DEP TIME	30	min
TEMPC:	630	GAS	SiH4	GAS		PRCPR	250 mtorr
TEMPS:	635	FLOW	75	FLOW
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:	Refractive index = 3.18, Good run
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	4605	4629	4576	4596	4601	4601.4	19.03	0.41	0.58
20	4587	4600	4563	4564	4581	4579.0	15.73	0.34	0.40
				Wafer to	Wafer	4590.2	20.26	0.44	0.72
						Dep Rate:	153.01	A/min