DATE:	7/6/2005		RECIPE:	POLY.002		Operator	Gordon
TUBE #:	T2		FILE:
Process:	LARGE GRAIN POLY
TEMPL:	625	DEP TIME	30	min
TEMPC:	630	GAS	SiH4	GAS		PRCPR	250 mtorr
TEMPS:	635	FLOW	75	FLOW
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:	Refractive index = 3.17, Good run
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	4525	4552	4496	4531	4530	4526.8	20.09	0.44	0.62
20	4504	4527	4484	4510	4508	4506.6	15.39	0.34	0.48
				Wafer to	Wafer	4516.7	19.95	0.44	0.75
						Dep Rate:	150.56	A/min