DATE:	6/22/2005		RECIPE:	POLY.002		Operator	Gordon
TUBE #:	T2		FILE:
Process:	LARGE GRAIN POLY
TEMPL:	625	DEP TIME	30	min
TEMPC:	630	GAS	SiH4	GAS		PRCPR	250 mtorr
TEMPS:	635	FLOW	75	FLOW
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:	Refractive index = 3.19, PRPRC not controlling, which is why dep rate is a little low
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	4006	4034	3974	4021	3999	4006.8	22.80	0.57	0.75
20	3984	4013	3967	3992	3990	3989.2	16.54	0.41	0.58
				Wafer to	Wafer	3998.0	20.94	0.52	0.84
						Dep Rate:	133.27	A/min