DATE:	6/22/2005		RECIPE:	POLY.002		Operator	Gordon
TUBE #:	T2		FILE:
Process:	LARGE GRAIN POLY
TEMPL:	625	DEP TIME	30	min
TEMPC:	630	GAS	SiH4	GAS		PRCPR	250 mtorr
TEMPS:	635	FLOW	75	FLOW
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:	Refractive index = 3.17
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	4571	4594	4553	4588	4576	4576.4	15.98	0.35	0.45
20	4528	4556	4504	4536	4522	4529.2	19.06	0.42	0.57
				Wafer to	Wafer	4552.8	29.90	0.66	0.99
						Dep Rate:	151.76	A/min