DATE:	6/15/2005		RECIPE:	POLY.002		Operator	Gordon
TUBE #:	T2		FILE:
Process:	LARGE GRAIN POLY
TEMPL:	625	DEP TIME	30	min
TEMPC:	630	GAS	SiH4	GAS		PRCPR	250 mtorr
TEMPS:	635	FLOW	75	FLOW
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	4404	4377	4430	4388	4488	4417.4	44.21	1.00	1.26
20	4352	4332	4391	4362	4364	4360.2	21.38	0.49	0.68
				Wafer to	Wafer	4388.8	44.51	1.01	1.78
						Dep Rate:	146.29	A/min