| DATE: |
6/8/2005 |
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RECIPE: |
POLY.002 |
Operator |
Henry |
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| TUBE #: |
T2 |
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FILE: |
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| Process: |
LARGE GRAIN POLY |
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| TEMPL: |
625 |
DEP TIME |
30 |
min |
|
| TEMPC: |
630 |
GAS |
SiH4 |
GAS |
|
PRCPR |
250 mtorr |
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| TEMPS: |
635 |
FLOW |
75 |
FLOW |
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| WAFER: |
4" SILICON |
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| SIZE |
100mm |
Substrate: |
100 |
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| LOAD |
25 |
Comment: |
Refractive index = 3.17 |
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| Run 2 |
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| POSITION |
1CENTER |
2TOP |
3BOTTOM |
4RIGHT |
5LEFT |
Mean Avg |
S1 Dev |
+ or - % |
HI-LO% |
| 5 |
4378 |
4333 |
4423 |
4382 |
4406 |
4384.4 |
34.08 |
0.78 |
1.03 |
| 20 |
4314 |
4272 |
4360 |
4328 |
4322 |
4319.2 |
31.64 |
0.73 |
1.02 |
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Wafer to |
Wafer |
4351.8 |
46.28 |
1.06 |
1.73 |
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Dep Rate: |
145.06 |
A/min |
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| Run 3 |
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| POSITION |
CENTER |
TOP |
LEFT |
BOTTOM |
RIGHT |
Mean Avg |
S1 Dev |
+ or - % |
HI-LO% |
| 5 |
4399 |
4356 |
4448 |
4408 |
4411 |
4404.4 |
32.90 |
0.75 |
1.04 |
| 20 |
4571 |
4332 |
4424 |
4369 |
4386 |
4416.4 |
92.54 |
2.10 |
2.71 |
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Wafer to |
Wafer |
4410.4 |
65.78 |
1.49 |
2.71 |
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Dep Rate: |
147.01 |
A/min |
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