DATE:	6/8/2005		RECIPE:	POLY.002		Operator	Henry
TUBE #:	T2		FILE:
Process:	LARGE GRAIN POLY
TEMPL:	625	DEP TIME	30	min
TEMPC:	630	GAS	SiH4	GAS		PRCPR	250 mtorr
TEMPS:	635	FLOW	75	FLOW
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:	Refractive index = 3.15
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	4399	4356	4448	4408	4411	4404.4	32.90	0.75	1.04
20	4571	4332	4424	4369	4386	4416.4	92.54	2.10	2.71
				Wafer to	Wafer	4410.4	65.78	1.49	2.71
						Dep Rate:	147.01	A/min