DATE:	6/8/2005		RECIPE:	POLY.002		Operator	Henry
TUBE #:	T2		FILE:
Process:	LARGE GRAIN POLY
TEMPL:	625	DEP TIME	30	min
TEMPC:	630	GAS	SiH4	GAS		PRCPR	250 mtorr
TEMPS:	635	FLOW	75	FLOW
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:	Refractive index = 3.17
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	4378	4333	4423	4382	4406	4384.4	34.08	0.78	1.03
20	4314	4272	4360	4328	4322	4319.2	31.64	0.73	1.02
				Wafer to	Wafer	4351.8	46.28	1.06	1.73
						Dep Rate:	145.06	A/min