| DATE: | 10/21/2008 | RECIPE: | NITRIDE.001 | Operator | Gordon | ||||
| TUBE #: | T1 | FILE: | |||||||
| Process: | Stochiometric SILICON NITRIDE | ||||||||
| TEMPL: | 725 | DEP TIME | 30 | min | |||||
| TEMPC: | 730 | GAS | DCS | GAS | NH3 | PRCPR | 250 mTorr | ||
| TEMPS: | 735 | FLOW | 25 | FLOW | 75 | ||||
| WAFER: | 4" SILICON | ||||||||
| SIZE | 100mm | Substrate: | 100 | ||||||
| LOAD | 25 | Comment | Refractive | Ellip: T=402.3A, n0=1.99, n1=33.1, n2=169 | |||||
| POSITION | CENTER | TOP | LEFT | BOTTOM | RIGHT | Mean Avg | S1 Dev | + or - % | HI-LO% |
| 13 | 401.2 | 398.7 | 406.5 | 414.3 | 407 | 405.5 | 6.03 | 1.49 | 1.92 |
| Dep Rate: | 13.52 | A/min | |||||||