DATE:	6/11/2008		RECIPE:	NITRIDE.001		Operator	Gordon
TUBE #:	T1		FILE:
Process:	Stochiometric SILICON NITRIDE
TEMPL:	725	DEP TIME	30	min
TEMPC:	730	GAS	DCS	GAS	NH3	PRCPR	250 mTorr
TEMPS:	735	FLOW	25	FLOW	75
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:	Refractive
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
13	458	459	467	472	462	463.6	5.86	1.26	1.51
						Dep Rate:	15.45	A/min