DATE:	1/7/2008		RECIPE:	NITRIDE.001		Operator	Gordon
TUBE #:	T1		FILE:
Process:	Stochiometric SILICON NITRIDE
TEMPL:	725	DEP TIME	30	min
TEMPC:	730	GAS	DCS	GAS	NH3	PRCPR	250 mTorr
TEMPS:	735	FLOW	25	FLOW	75
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:		Pressure control malfunction
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	269	265	275	280	274	272.6	5.77	2.12	2.75
13	263	260	270	274	268	267.0	5.57	2.09	2.62
20	260	255	266	272	267	264.0	6.60	2.50	3.22
				Wafer to	Wafer	265.5	5.97	2.25	3.58
						Dep Rate:	8.85	A/min