DATE:	1/3/2008		RECIPE:	NITRIDE.001		Operator	Gordon
TUBE #:	T1		FILE:
Process:	Stochiometric SILICON NITRIDE
TEMPL:	725	DEP TIME	30	min
TEMPC:	730	GAS	DCS	GAS	NH3	PRCPR	250 mTorr
TEMPS:	735	FLOW	25	FLOW	75
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:		Presssure control malfunction
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	258	255	263	268	267	262.2	5.63	2.15	2.48
13	253	249	258	263	257	256.0	5.29	2.07	2.73
20	249	245	254	261	256	253.0	6.20	2.45	3.16
				Wafer to	Wafer	254.5	5.66	2.22	3.54
						Dep Rate:	8.48	A/min