DATE:	12/4/2007		RECIPE:	NITRIDE.001		Operator	Gordon
TUBE #:	T1		FILE:
Process:	Stochiometric SILICON NITRIDE
TEMPL:	725	DEP TIME	30	min
TEMPC:	730	GAS	DCS	GAS	NH3	PRCPR	250 mTorr
TEMPS:	735	FLOW	25	FLOW	75
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:	Refractive
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	346	338	351	357	351	348.6	7.09	2.03	2.73
13	343	336	350	354	345	345.6	6.88	1.99	2.60
20	343	336	349	356	349	346.6	7.50	2.16	2.89
				Wafer to	Wafer	346.1	6.81	1.97	2.89
						Dep Rate:	11.54	A/min