DATE:	10/30/2007		RECIPE:	NITRIDE.001		Operator	Gordon
TUBE #:	T1		FILE:
Process:	Stochiometric SILICON NITRIDE
TEMPL:	725	DEP TIME	30	min
TEMPC:	730	GAS	DCS	GAS	NH3	PRCPR	250 mTorr
TEMPS:	735	FLOW	25	FLOW	75
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:	Refractive
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	484	475	472	482	480	478.6	4.98	1.04	1.25
13	476	466	463	471	471	469.4	5.03	1.07	1.38
20	471	461	458	468	467	465.0	5.34	1.15	1.40
				Wafer to	Wafer	467.2	5.41	1.16	1.93
						Dep Rate:	15.57	A/min