DATE:	8/3/2005		RECIPE:	NITRIDE.001		Operator	Gordon
TUBE #:	T1		FILE:
Process:	Stochiometric SILICON NITRIDE
TEMPL:	725	DEP TIME	30	min
TEMPC:	730	GAS	DCS	GAS	NH3	PRCPR	250 mTorr
TEMPS:	735	FLOW	25	FLOW	75
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	5	Comment:	Refractive
POSITION	CENTER	TOP	LEFT	BOTTOM	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	475	488	472	482	483	480.0	6.44	1.34	1.67
20	488	500	486	495	497	493.2	5.97	1.21	1.42
				Wafer to	Wafer	486.6	9.09	1.87	2.88
						Dep Rate:	16.22	A/min