| DATE: | 8/2/2005 | RECIPE: | NITRIDE.001 | Operator | Gordon | |||||
| TUBE #: | T1 | FILE: | ||||||||
| Process: | Stochiometric SILICON NITRIDE | |||||||||
| TEMPL: | 725 | DEP TIME | 30 | min | ||||||
| TEMPC: | 730 | GAS | DCS | GAS | NH3 | PRCPR | 250 mTorr | |||
| TEMPS: | 735 | FLOW | 25 | FLOW | 75 | |||||
| WAFER: | 4" SILICON | |||||||||
| SIZE | 100mm | Substrate: | 100 | |||||||
| LOAD | 5 | Comment | Refractive i | 1.96 | ||||||
| POSITION | CENTER | TOP | LEFT | BOTTOM | RIGHT | Mean Avg | S1 Dev | + or - % | HI-LO% | |
| 5 | 459 | 472 | 456 | 464 | 468 | 463.8 | 6.50 | 1.40 | 1.72 | |
| 20 | 472 | 483 | 470 | 477 | 480 | 476.4 | 5.41 | 1.14 | 1.36 | |
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Wafer to | Wafer | 470.1 | 8.71 | 1.85 | 2.87 | ||||
| Dep Rate: | 15.67 | A/min | ||||||||