| DATE: | 7/27/2005 | RECIPE: | NITRIDE.001 | Operator | Gordon | |||||
| TUBE #: | T1 | FILE: | ||||||||
| Process: | Stochiometric SILICON NITRIDE | |||||||||
| TEMPL: | 725 | DEP TIME | 30 | min | ||||||
| TEMPC: | 730 | GAS | DCS | GAS | NH3 | PRCPR | 250 mTorr | |||
| TEMPS: | 735 | FLOW | 25 | FLOW | 75 | |||||
| WAFER: | 4" SILICON | |||||||||
| SIZE | 100mm | Substrate: | 100 | |||||||
| LOAD | 5 | Comment | Refractive i | 1.96 | ||||||
| POSITION | CENTER | TOP | LEFT | BOTTOM | RIGHT | Mean Avg | S1 Dev | + or - % | HI-LO% | |
| 5 | 421 | 428 | 418 | 423 | 425 | 423.0 | 3.81 | 0.90 | 1.18 | |
| 20 | 434 | 441 | 432 | 437 | 437 | 436.2 | 3.42 | 0.78 | 1.03 | |
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Wafer to | Wafer | 429.6 | 7.75 | 1.80 | 2.68 | ||||
| Dep Rate: | 14.32 | A/min | ||||||||