| DATE: | 7/1/2005 | RECIPE: | NITRIDE.001 | Operator | Gordon | |||||
| TUBE #: | T1 | FILE: | ||||||||
| Process: | Stochiometric SILICON NITRIDE | |||||||||
| TEMPL: | 725 | DEP TIME | 30 | min | ||||||
| TEMPC: | 730 | GAS | DCS | GAS | NH3 | PRCPR | 250 mTorr | |||
| TEMPS: | 735 | FLOW | 25 | FLOW | 75 | |||||
| WAFER: | 4" SILICON | |||||||||
| SIZE | 100mm | Substrate: | 100 | |||||||
| LOAD | 5 | Comment | Refractive i | 1.96 | Horizontal wafer dep, 4 dummy wafers | |||||
| POSITION | CENTER | TOP | LEFT | BOTTOM | RIGHT | Mean Avg | S1 Dev | + or - % | HI-LO% | |
| 5 | 536.6 | 529.5 | 538.6 | 534.5 | 534.5 | 534.7 | 3.39 | 0.63 | 0.85 | |
|
|
Wafer to | Wafer | 534.7 | 3.39 | 0.63 | 0.85 | ||||
| Dep Rate: | 17.82 | A/min | ||||||||