DATE:

6/29/2005

RECIPE:

NITRIDE.001

Operator

Gordon

TUBE #:

T1

FILE:

Process:

Stochiometric SILICON NITRIDE

TEMPL:

725

DEP TIME

30

min

TEMPC:

730

GAS

DCS

GAS

NH3

PRCPR

250 mTorr

TEMPS:

735

FLOW

25

FLOW

75

WAFER:

4" SILICON

SIZE

100mm

Substrate:

100

LOAD

25

Comment

Refractive i

POSITION

1CENTER

2TOP

3BOTTOM

4RIGHT

5LEFT

Mean Avg

S1 Dev

+ or - %

HI-LO%

5

421.2

428.4

419.3

424.3

426.2

423.9

3.68

0.87

1.07

20

433.7

439.8

431.4

435.6

437.9

435.7

3.32

0.76

0.96

Wafer to

Wafer

429.8

7.04

1.64

2.38

Dep Rate:

14.33

A/min