| DATE: | 6/9/2005 | RECIPE: | NITRIDE.001 | Operator | Gordon | |||||
| TUBE #: | T1 | FILE: | ||||||||
| Process: | Stochiometric SILICON NITRIDE | |||||||||
| TEMPL: | 725 | DEP TIME | 30 | min | ||||||
| TEMPC: | 730 | GAS | DCS | GAS | NH3 | PRCPR | 250 mtorr | |||
| TEMPS: | 735 | FLOW | 25 | FLOW | 75 | |||||
| WAFER: | 4" SILICON | |||||||||
| SIZE | 100mm | Substrate: | 100 | |||||||
| LOAD | 25 | Comment | Refractive i | 1.96 | ||||||
| POSITION | 1CENTER | 2TOP | 3BOTTOM | 4RIGHT | 5LEFT | Mean Avg | S1 Dev | + or - % | HI-LO% | |
| 5 | 445.1 | 443.8 | 455.5 | 451.7 | 451.2 | 449.5 | 4.89 | 1.09 | 1.30 | |
| 20 | 450 | 458.7 | 469.5 | 465 | 465 | 461.6 | 7.56 | 1.64 | 2.11 | |
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Wafer to | Wafer | 455.6 | 8.79 | 1.93 | 2.82 | ||||
| Dep Rate: | 15.19 | A/min | ||||||||