DATE:	8/5/2009		RECIPE:	LSNIT.001		Operator	Gordon
TUBE #:	T1		FILE:
Process:	LOW STRESS SILICON NITRIDE
TEMPL:	835	DEP TIME	30	min
TEMPC:	835	GAS	DCS	GAS	NH3	PRCPR	250 mTorr
TEMPS:	835	FLOW	100	FLOW	20
WAFER:	4" SILICON
SIZE	100mm	Substrate:	<100>
LOAD	25	Comment:	Refractive index: n0 = 2.105, n1=249, n2 = 144
POSITION	CENTER	TOP	LEFT	FLAT	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
13	1228	1253	1315	1311	1238	1269.0	41.16	3.24	3.43
						Dep Rate:	42.30	A/min