DATE:	7/11/2008		RECIPE:	LSNIT.001		Operator	Gordon
TUBE #:	T1		FILE:
Process:	LOW STRESS SILICON NITRIDE
TEMPL:	835	DEP TIME	30	min
TEMPC:	835	GAS	DCS	GAS	NH3	PRCPR	250 mTorr
TEMPS:	835	FLOW	100	FLOW	20
WAFER:	4" SILICON
SIZE	100mm	Substrate:	<100>
LOAD	25	Comment:	Refractive index: n0=2.105, n1=861, n2=-538
POSITION	CENTER	TOP	LEFT	FLAT	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
13	1449	1445	1542	1579	1505	1504.0	58.26	3.87	4.45
						Dep Rate:	50.13	A/min