DATE:	8/24/2005		RECIPE:	LSNIT.001		Operator	Gordon
TUBE #:	T1		FILE:
Process:	LOW STRESS SILICON NITRIDE
TEMPL:	835	DEP TIME	30	min
TEMPC:	835	GAS	DCS	GAS	NH3	PRCPR	250 mTorr
TEMPS:	835	FLOW	100	FLOW	20
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:	Refractive index = 2.19
POSITION	1CENTER	2TOP	3BOTTOM	4RIGHT	5LEFT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	1336	1471	1350	1406	1440	1400.6	57.60	4.11	4.82
20	1189	1340	1207	1244	1306	1257.2	64.39	5.12	6.01
				Wafer to	Wafer	1328.9	95.02	7.15	10.61
						Dep Rate:	44.30	A/min