DATE:	7/14/2005		RECIPE:	LSNIT.001		Operator	Gordon
TUBE #:	T1		FILE:
Process:	LOW STRESS SILICON NITRIDE
TEMPL:	835	DEP TIME	30	min
TEMPC:	835	GAS	DCS	GAS	NH3	PRCPR	250 mTorr
TEMPS:	835	FLOW	100	FLOW	20
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:	Refractive index = 2.19
POSITION	1CENTER	2TOP	3BOTTOM	4RIGHT	5LEFT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	1255	1356	1256	1311	1321	1299.8	43.76	3.37	3.89
20	1141	1218	1148	1202	1202	1182.2	35.12	2.97	3.26
				Wafer to	Wafer	1241.0	72.39	5.83	8.66
						Dep Rate:	41.37	A/min