DATE:	7/6/2005		RECIPE:	LSNIT.001		Operator	Gordon
TUBE #:	T1		FILE:
Process:	LOW STRESS SILICON NITRIDE
TEMPL:	835	DEP TIME	30	min
TEMPC:	835	GAS	DCS	GAS	NH3	PRCPR	250 mTorr
TEMPS:	835	FLOW	100	FLOW	20
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:	Refractive index = 2.18
POSITION	1CENTER	2TOP	3BOTTOM	4RIGHT	5LEFT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	1291	1438	1306	1380	1401	1363.2	62.83	4.61	5.39
20	1160	1277	1171	1244	1252	1220.8	52.07	4.27	4.79
				Wafer to	Wafer	1292.0	92.70	7.17	10.76
						Dep Rate:	43.07	A/min