DATE:	6/15/2005		RECIPE:	LSNIT.001		Operator	Gordon
TUBE #:	T1		FILE:
Process:	LOW STRESS SILICON NITRIDE
TEMPL:	835	DEP TIME	30	min
TEMPC:	835	GAS	DCS	GAS	NH3	PRCPR	250 mTorr
TEMPS:	835	FLOW	100	FLOW	20
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:	Refractive index = 2.18
POSITION	1CENTER	2TOP	3BOTTOM	4RIGHT	5LEFT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	1148	1149	1200	1176	1182	1171.0	22.36	1.91	2.22
20	1082	1092	1133	1124	1122	1110.6	22.22	2.00	2.30
				Wafer to	Wafer	1140.8	38.15	3.34	5.17
						Dep Rate:	38.03	A/min