DATE:	6/8/2005		RECIPE:	LSNIT.001		Operator	Henry
TUBE #:	T1		FILE:
Process:	LOW STRESS SILICON NITRIDE
TEMPL:	835	DEP TIME	30	min
TEMPC:	835	GAS	DCS	GAS	NH3	PRCPR	250 mTorr
TEMPS:	835	FLOW	100	FLOW	20
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:	Refractive index = 2.18
POSITION	1CENTER	2TOP	3BOTTOM	4RIGHT	5LEFT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	1220	1231	1337	1296	1292	1275.2	48.82	3.83	4.59
20	1130	1143	1205	1185	1168	1166.2	30.46	2.61	3.22
				Wafer to	Wafer	1220.7	69.08	5.66	8.48
						Dep Rate:	40.69	A/min