DATE:	6/8/2005		RECIPE:	LSNIT.001		Operator	Henry
TUBE #:	T1		FILE:
Process:	LOW STRESS SILICON NITRIDE
TEMPL:	835	DEP TIME	30	min
TEMPC:	835	GAS	DCS	GAS	NH3	PRCPR	250 mTorr
TEMPS:	835	FLOW	100	FLOW	20
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:	Refractive index = 2.09
POSITION	1CENTER	2TOP	3BOTTOM	4RIGHT	5LEFT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	1140	1150	1220	1200	1260	1194.0	49.80	4.17	5.03
20	1070	1080	1140	1120	1120	1106.0	29.66	2.68	3.16
				Wafer to	Wafer	1150.0	60.37	5.25	8.26
						Dep Rate:	38.33	A/min