DATE:	6/7/2005		RECIPE:	LSNIT.001		Operator	Henry
TUBE #:	T1		FILE:
Process:	LOW STRESS SILICON NITRIDE
TEMPL:	835	DEP TIME	30	min
TEMPC:	835	GAS	DCS	GAS	NH3	PRCPR	250 mTorr
TEMPS:	835	FLOW	100	FLOW	20
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	25	Comment:	Refractive index = 2.09
POSITION	1CENTER	2TOP	3BOTTOM	4RIGHT	5LEFT	Mean Avg	S1 Dev	+ or - %	HI-LO%
5	873	882	943	925	981	920.8	44.51	4.83	5.86
20	797	812	871	852	853	837.0	31.07	3.71	4.42
				Wafer to	Wafer	878.9	57.10	6.50	10.47
						Dep Rate:	29.30	A/min