DATE:	8/12/2009		RECIPE:	STDSI		Operator	Gordon
Tool ID:	PD01
Process:	Amorphous Silicon
TEMP:	200 C	DEP TIME	10	min	PRCPR	900 mTorr	Power	50 W
GAS	2% SiH4	GAS	He
FLOW	400	FLOW	600
WAFER:	4" SILICON
SIZE	100mm	Substrate:	<100>
LOAD	1	Comment:
Nanospec
POSITION	Center	Top	Left	Flat	Right	Mean Avg	S1 Dev	+ or - %	HI-LO%
center	1284	1268	1278	1288	1280	1279.6	7.54	0.59	0.78
						Dep Rate:	127.96	A/min